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STMicroelectronics Darlington Transistor PNP 10 A 100 V 750 HFE 3-Pin TO-220 BDX34C
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | BDX34C |
| Mount Type | Through Hole |
| Series | BDX34C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 10A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 200μA |
| Maximum Power Dissipation Pd | 70W |
| Magnatec BDX34C PNP Darlington Pair, 10 A 100 V HFE | 750, 3-Pin TO-220Brand: Magnatec |
| STMicroelectronics BDX54B PNP Darlington Transistor, 8 A 80 V HFE | 750, 3-Pin TO-220Brand: STMicroelectronics |
| STMicroelectronics BDX34C 1 Darlington Transistor PNP, 10 A 100 V HFE | 750, 3-Pin TO-220 |
Key Features
- This transistor has a high DC current gain (hFE) of 750 for efficient amplification.
- Designed for through-hole mounting with a robust TO-220 package type.
- Maximum power dissipation of 70 W supports high power applications.
- Operates reliably within a temperature range from -65°C to 150°C.
- Includes protection ratings such as max collector base voltage of 100 V and emitter base voltage of 5 V.
- Collector saturation voltage is limited to 2.5 V ensuring reduced power loss.
- Features a low maximum collector cutoff current of 200 μA for minimal leakage.
- Ideal for use in power amplification, switching circuits, and industrial electronics.
Product Description
STMicroelectronics BDX34C is a robust PNP Darlington Transistor designed to handle continuous collector currents up to 10 A with a maximum collector-emitter voltage rating of 100 V. Packaged in a TO-220 form factor with 3 pins and intended for through-hole mounting, this transistor provides a high DC gain (hFE) of 750, facilitating high amplification efficiency in circuits.
The device offers a maximum power dissipation of 70 W, allowing sustained operation in demanding electrical environments. It operates effectively over a wide temperature span from -65°C to 150°C, making it suitable for applications that require high thermal stability and reliable performance under harsh industrial conditions.
The BDX34C's electrical characteristics include a maximum collector saturation voltage of 2.5 V and maximum collector cutoff current of 200 μA, enhancing power efficiency and minimizing leakage currents. The maximum emitter-base voltage is specified at 5 V, with a collector-base voltage limit of 100 V, ensuring comprehensive protection in various circuit setups.
This PNP Darlington Transistor is widely applicable in power amplification circuits, switching regulators, and industrial electronic controls where high current gain and robust packaging are essential. Its TO-220 package aids heat dissipation and mechanical stability during assembly and operation.
High DC current gain (hFE) of 750 ensures effective signal amplification. Maximum continuous collector current (Ic) of 10 A suits power applications. TO-220 package supports easy through-hole mounting and heat dissipation.
Wide operating temperature range from -65°C to 150°C for industrial reliability. Low collector-emitter saturation voltage reduces power loss and thermal buildup. Maximum power dissipation of 70 W allows durable high-power circuit use.
Stable electrical characteristics including 100 V maximum collector-emitter voltage. PNP polarity suitable for complementary transistor configurations and switching circuits.
Explore the broad STMicroelectronics portfolio for advanced semiconductor devices ideal for industrial, automotive, laboratory, and consumer electronics applications. EnvMart offers comprehensive selections for reliable high-performance components in demanding electronic designs.
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