$0.16
$0.16
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
ROHM N-Channel MOSFET 380 mA 60 V Enhancement 3-Pin UMT Package BSS138BWAHZGT106
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1mm |
| Length | 2.1mm |
| Model | BSS138BWAHZGT106 |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | UMT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 380mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 680mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300mW |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This enhancement mode MOSFET features an ultra-low voltage drive for efficient switching.
- It includes an ESD protection diode ideal for switching circuits and high-side load switch applications.
- The device is surface-mounted and has a maximum power dissipation of 300 mW.
- Operating temperature ranges from -55°C to 150°C ensure high reliability over wide conditions.
- It meets automotive grade standards with AEC-Q101 qualification for durability and quality.
- Package dimensions are compact with length 2.1 mm, width 1.35 mm, and height 1 mm.
- The maximum gate-source voltage rating is 20 V, with a forward voltage of 1.2 V.
- The MOSFET has a low maximum drain-source resistance of 680 mΩ for energy-efficient operation.
Product Description
ROHM BSS138BWAHZGT106 N-Channel MOSFET is a high-performance 3-pin UMT package transistor designed for switching circuits and high-side load switches. It supports a maximum continuous drain current of 380 mA and a maximum drain-source voltage of 60 V, suitable for various semiconductor applications in industrial, automotive, and electronic component manufacturing.
The device operates under enhancement mode with ultra-low voltage drive capabilities, making it energy efficient in relay driver and switching applications. The inclusion of an ESD protection diode further ensures reliability against electrostatic discharge damage.
Manufactured to meet automotive-grade standards with AEC-Q101 qualification, this MOSFET withstands operating temperatures ranging from -55°C to 150°C, ensuring durability and consistent performance in harsh environments.
Compact in size with dimensions of 2.1 mm (length), 1.35 mm (width), and 1 mm (height), and a low forward voltage of 1.2 V, it is ideal for space-constrained PCB designs requiring surface mount technology.
Key technical features include a maximum gate-source voltage of 20 V and a maximum drain-source resistance of 680 mΩ, contributing to efficient power management and minimal heat generation with a maximum power dissipation of 300 mW.
This MOSFET is well suited for automotive electronics, industrial power management, and consumer electronics circuits. Its high reliability and robust ratings make it favorable for high-side load switches and relay driver designs.
The compact UMT package ensures easy integration onto PCB assemblies with Surface Mount Device (SMD) processes. Supports a wide temperature range and meets automotive quality requirements for critical applications. Offers superior electrostatic discharge (ESD) protection to enhance device longevity.
Explore additional ROHM electronic components and semiconductors for diverse industrial and automotive applications through EnvMart’s reliable catalog.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 380 mA.
It has a maximum drain-source voltage rating of 60 V.
The dimensions of this MOSFET are 2.1 mm in length, 1.35 mm in width, and 1 mm in height.
The maximum power dissipation for this model is 300 mW.
This MOSFET operates within a temperature range of -55°C to 150°C.
It is packaged in a compact UMT package.
The maximum gate-source voltage rating is 20 V.
The maximum drain-source resistance is 680 mΩ.
Yes, it meets automotive grade standards with AEC-Q101 qualification.
The forward voltage for this MOSFET is 1.2 V.
This device features an N-channel configuration.
This MOSFET is suitable for switching circuits and high-side load switch applications.
Related Products
Other Products from this brand
$3.31
$3.21
-3%
New
$3.62
$3.51
-3%
New
$4.03
$3.91
-3%
New
$0.23
$0.22
-3%
New
Recently Viewed Products
$0.16
$0.16
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent