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Nexperia Transistor PNP 100 mA, 45 V, 3-Pin SOT-883 Surface Mount BC857BM,315

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 0.47mm
Length 1.2mm
Model BC857BM,315
Width 0.62mm
Mount Type Surface
Series BC857M
Maximum Operating Temperature 150°C
Package Type SOT-883
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 125
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Maximum Power Dissipation Pd 430mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • The transistor supports a maximum power dissipation of 430 mW.
  • It features a minimum DC current gain (hFE) of 125 supporting low to medium frequency applications.
  • Designed for surface mount technology with a small 3-pin SOT-883 package.
  • Operational temperature ranges from -65°C to 150°C making it suitable for industrial and commercial uses.
  • Commonly used in switching and amplification within electronic devices.
  • Low-profile height of 0.47 mm ensures minimal board space utilization.
  • RoHS compliant ensuring environmental safety standards.
  • Compatible with portable electronics such as mobile communications and digital cameras.

Product Description

Nexperia BC857BM,315 is a PNP bipolar transistor designed for general-purpose switching and amplification applications. It features a maximum DC collector current of 100 mA and maximum collector-emitter voltage of 45 V housed in the ultra-compact 3-pin SOT-883 (SC-101) leadless plastic package measuring just 1.2 mm by 0.62 mm by 0.47 mm.

This transistor supports a maximum power dissipation of 430 mW and a transition frequency of up to 100 MHz, making it ideal for low to medium frequency AC applications such as mobile communications, digital cameras, PDAs, and PCMCIA cards. It is RoHS compliant and designed to optimize board space with its leadless package of approximately 1.3 x 0.9 mm footprint.

The device operates reliably over a wide temperature range from -65°C to 150°C. It features a high current gain (hFE) minimum of 125 and is suitable for surface mount assembly processes. This transistor series offers a broad range of small-signal bipolar devices with various package options, delivering excellent compactness and performance for demanding industrial and commercial electronics.

The transistor provides a maximum collector base voltage (VCBO) of 50 V and maximum emitter base voltage (VEBO) of 5 V. Its small size and efficient power dissipation allow usage in compact designs and high-density circuit boards.

This transistor is widely applicable across electronics manufacturing, laboratory testing, industrial equipment, and consumer electronics sectors. Its surface mount configuration supports automated assembly and higher reliability in electronic circuits.

For additional technical documents, 3D models, schematics, and footprints, users are encouraged to utilize design resources compatible with this transistor model. Explore more Bipolar Transistors and related semiconductor products to find complementary components on EnvMart's Electronics & Electricals section.

Nexperia Transistor PNP 100 mA, 45 V, 3-Pin SOT-883 Surface Mount BC857BM,315
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Frequently Asked Questions

The maximum power dissipation of this transistor is 430 mW.

This model has dimensions of 1.2 mm in length, 0.62 mm in width, and a height of 0.47 mm.

The minimum DC current gain (hFE) for this transistor is 125.

The maximum collector-emitter voltage (Vceo) for this model is -45 V.

The operating temperature range for this transistor is from -65°C to 150°C.

This transistor uses a 3-pin SOT-883 surface mount package.

The maximum DC collector current for this model is -100 mA.

The maximum transition frequency for this transistor is 100 MHz.

Yes, this transistor is RoHS compliant, ensuring it meets environmental safety standards.

This transistor is commonly used in switching and amplification applications within mobile communications, digital cameras, and other electronic devices.

The maximum emitter-base voltage (VEBO) for this transistor is -5 V.

The maximum collector-base voltage (VCBO) for this model is -50 V.

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