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STMicroelectronics Darlington Transistor PNP 8 A 100 V 20 W TO-252 Surface Mount 3-Pin MJD127T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | MJD127T4 |
| Mount Type | Surface |
| Series | MJD127 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.01mA |
| Maximum Power Dissipation Pd | 20W |
| STMicroelectronics MJD127T4 1 Darlington Transistor PNP, 8 A 100 V HFE | 100, 3-Pin DPAK |
Key Features
- Features a TO-252 surface mount package for efficient PCB integration.
- Maximum power dissipation rating of 20 watts ensures reliable operation under demanding conditions.
- High current gain with a minimum DC current gain (hFE) of 100 supports amplification needs.
- Wide operating temperature range from -65°C to 150°C suitable for varied industrial environments.
- 3-pin configuration simplifies circuit design and mounting.
- Maximum emitter-base voltage of 5 V and collector-emitter saturation voltage up to 2 V for stable switching.
- Robust design without specific automotive standards but suitable for general industrial and electronic applications.
- Compact transistor dimensions with 6.6 mm length and 2.4 mm height optimize space on circuit boards.
Product Description
STMicroelectronics MJD127T4 is a PNP Darlington transistor designed for industrial and electronic applications requiring high current and voltage handling capabilities. This component supports a maximum continuous collector current of 8 A and can withstand collector-emitter voltages up to 100 V, making it suitable for power amplification and switching circuits.
The transistor is housed in a TO-252 surface mount package with a compact 3-pin layout, enabling easy integration on printed circuit boards. It offers a minimum DC current gain (hFE) of 100, enhancing amplification efficiency.
Engineered to operate reliably across a broad temperature range from -65°C to 150°C, it is suited for demanding environments. The device features a maximum power dissipation rating of 20 W, accommodating substantial power loads without degradation.
Additional electrical characteristics include a maximum emitter-base voltage of 5 V, a collector-emitter saturation voltage not exceeding 2 V, and a maximum collector base voltage of 100 V. These ensure stable performance in switching applications.
While it lacks automotive-standard certifications, the MJD127T4 excels in laboratory, manufacturing, HVAC, and consumer electronic applications requiring robust power transistor solutions.
TO-252 surface mount package with 3 pins for easy PCB integration. Handles currents up to 8 A continuously with power dissipation of 20 W. Minimum DC current gain (hFE) of 100 enhances signal amplification. Wide operational temperature range from -65°C to 150°C.
High voltage tolerance with collector-emitter voltage up to 100 V. Compact size: length 6.6 mm, height 2.4 mm. Stable performance with low saturation voltage of 2 V. Ideal for industrial, laboratory, and electronic component manufacturing uses.
This STMicroelectronics Darlington transistor is rigorously manufactured for dependable performance. It is an optimal choice in electronics requiring reliable amplification and power management components. Explore similar products in our Darlington Transistor category on EnvMart for advanced semiconductor solutions.
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Frequently Asked Questions
The MJD127T4 can handle a maximum continuous collector current of 8 A.
It has a maximum power dissipation rating of 20 W, allowing it to manage substantial power loads.
This model operates reliably across a wide temperature range from -65°C to 150°C.
The MJD127T4 features a minimum DC current gain (hFE) of 100, which supports efficient amplification.
It can withstand a maximum collector-emitter voltage of 100 V, making it suitable for high-voltage applications.
This transistor is housed in a TO-252 surface mount package, which simplifies PCB integration.
The transistor has a length of 6.6 mm and a height of 2.4 mm, optimizing space on circuit boards.
The maximum emitter-base voltage (VEBO) for the MJD127T4 is 5 V.
It is suitable for general industrial and electronic applications, including power amplification and switching circuits.
This model features a 3-pin configuration, which facilitates circuit design and mounting.
The maximum collector base voltage (VCBO) for this transistor is 100 V.
The collector-emitter saturation voltage (VceSAT) does not exceed 2 V, ensuring stable performance in switching applications.
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