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ROHM P-Channel MOSFET 4A 30V Enhancement Mode 3-Pin TSMT Package RQ5E040RPTL
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 850μm |
| Length | 2.9mm |
| Model | RQ5E040RPTL |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | RRR040P03 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSMT |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 72mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 10.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET supports surface mount installation for easy PCB integration.
- Maximum power dissipation is rated at 1 Watt for efficient thermal management.
- Typical gate charge is 10.5 nC at Vgs, enabling fast switching performance.
- Maximum drain-source resistance is 72 milliohms, delivering low conduction losses.
- Can operate at temperatures up to 150 degrees Celsius for reliable industrial use.
- Pin count is 3, suitable for standard circuit designs.
- Forward voltage is -1.2V ensuring proper device operation at defined voltages.
- Maximum gate-source voltage ranges between -20V and +20V.
Product Description
ROHM RQ5E040RPTL is a P-Channel MOSFET designed for discrete semiconductor applications requiring high efficiency and reliable switching. It supports a maximum continuous drain current of 4A and withstands a maximum drain-source voltage of 30V, making it suitable for moderate power circuits and control systems.
This component is housed in a 3-pin TSMT package optimized for surface mounting, providing a compact footprint of approximately 2.9mm length, 1.6mm width, and 850 micrometers height. Its enhancement mode channel enables effective control in power management applications.
The device boasts a maximum drain-source resistance of 72 milliohms, limiting power loss during conduction, and features a gate charge of 10.5 nC at the gate-source voltage for responsive switching. Gate-source voltage is rated at ±20V, providing strong gate drive tolerance.
Operating temperature capability up to 150°C ensures durability in demanding industrial, automotive, and consumer electronics environments. The MOSFET's forward voltage of -1.2V supports stable device turn-on characteristics.
This product is ideal for designers and engineers working in electronic components, power semiconductors, and discrete semiconductor manufacturing for applications including power regulation, filtering, and switching.
This MOSFET supports surface mount installation for easy PCB integration. Maximum power dissipation is rated at 1 Watt for efficient thermal management. Typical gate charge is 10.5 nC at Vgs, enabling fast switching performance.
Maximum drain-source resistance is 72 milliohms, delivering low conduction losses. Can operate at temperatures up to 150 degrees Celsius for reliable industrial use. Pin count is 3, suitable for standard circuit designs.
Forward voltage is -1.2V ensuring proper device operation at defined voltages. Maximum gate-source voltage ranges between -20V and +20V. Explore our range of semiconductor components and MOSFETs at EnvMart for advanced electronics solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4A.
It can withstand a maximum drain-source voltage of 30V.
The typical gate charge is 10.5 nC at the gate-source voltage.
The maximum drain-source resistance is 72 milliohms.
This MOSFET can operate at temperatures up to 150 degrees Celsius.
The dimensions of the TSMT package are approximately 2.9mm in length, 1.6mm in width, and 850 micrometers in height.
It supports surface mount installation for easy PCB integration.
The forward voltage is -1.2V, ensuring proper device operation at defined voltages.
The maximum power dissipation is rated at 1 Watt.
The maximum gate-source voltage ranges between -20V and +20V.
This model features a P-channel type configuration.
It is suitable for applications including power regulation, filtering, and switching.
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