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ROHM N-Channel MOSFET 200 mA 20 V Enhancement Mode 3-Pin SOT-416 RE1C002UNTCL

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ROHM N-Channel MOSFET 200 mA 20 V Enhancement Mode 3-Pin SOT-416 RE1C002UNTCL

Name: ROHM N-Channel MOSFET 200 mA 20 V Enhancement Mode 3-Pin SOT-416 RE1C002UNTCL
Brand: ROHM
SKU: 196094
Price: 0.08 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	800μm
Length	1.7mm
Model	RE1C002UNTCL
Width	960μm
Mount Type	Surface
Series	RE1C002UN
Maximum Operating Temperature	150°C
Package Type	SOT-416
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	4.8Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150mW
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	1.2V

Key Features

This MOSFET operates in enhancement mode for efficient switching performance.
Maximum continuous drain current of 200 mA ensures suitability for low power applications.
Offers a maximum drain-source voltage of 20 V for stable operation.
Features low maximum drain-source resistance of 4.8 ohms for minimized losses.
Compact surface mount SOT-416 package with 3 pins supports space-saving PCB layouts.
Wide operating temperature range from -55°C to 150°C allows use in harsh environments.
Capable of dissipating up to 150 mW power ensuring reliable thermal handling.
Designed to withstand gate-source voltages between -8 V and +8 V.

Product Description

The ROHM RE1C002UNTCL is a high-quality N-Channel MOSFET transistor designed for low current switching and amplification tasks in electronic circuits. Featuring a maximum continuous drain current of 200 mA and a maximum drain-source voltage of 20 V, this device is engineered to operate efficiently in enhancement mode.

Its surface mount package, SOT-416, lends itself to compact circuit designs, facilitating automated assembly and enhanced production efficiency. The device boasts a low maximum drain-source resistance of 4.8 Ω which minimizes conduction losses and enhances overall circuit efficiency. Additionally, it can dissipate up to 150 milliwatts of power safely within its maximum operating temperature limit of 150°C, ensuring durability and stability under demanding conditions.

The RE1C002UNTCL supports a wide range of operating temperatures from -55°C to 150°C, making it applicable to industrial, automotive, and consumer electronics where temperature extremes are common. Its 3-pin configuration simplifies integration into circuit layouts while maintaining reliable electrical performance.

This MOSFET is suitable for use in industrial, electronics manufacturing, prototyping, and repair scenarios. Common applications include power management, signal switching, and amplification in low power devices. It is ideal for designers requiring a compact, efficient, and robust N-channel transistor solution.

Package dimensions are precise with a length of 1.7 mm, width of 960 μm, and height of 800 μm for space-constrained applications. The forward voltage is typically 1.2 V to maintain efficient device switching characteristics.

ROHM's RE1C002UNTCL continues their tradition of providing reliable semiconductor components optimized for modern electronic requirements. It complies with industry standards though there are no specific certifications listed for this device.

Explore EnvMart's Electronics & Electricals category for a broad range of semiconductors and MOSFET devices suited for your project needs.