ROHM P-Channel MOSFET 4 A 12 V Enhancement 3-Pin SOT-323 RAF040P01TCL

ROHM RAF040P01TCL is a P-Channel MOSFET transistor designed for efficient switching and amplification in electronics applications. It features a surface mount 3-pin SOT-323 package, making it suitable for compact PCB layouts in industrial and commercial electronics.

This MOSFET supports a maximum continuous drain current of 4 A and a maximum drain-source voltage of 12 V, operating effectively within a temperature range of -55°C to 150°C. The device's enhancement mode channel and low drain-source resistance of 68 mΩ reduce power losses during operation, improving circuit efficiency.

The maximum power dissipation rating of 800 mW allows stable performance in demanding environments. Its typical gate charge of 37 nC enables rapid switching speeds, suitable for industrial control circuits, power management, and electronic load applications.

The compact form factor with dimensions 2.1 mm length, 1.8 mm width, and height 820 μm enables integration into dense assemblies. The maximum gate-source voltage is -8 V, supporting reliable gate control, while the forward voltage of -1.2 V optimizes conduction efficiency.

This component is ideal for industrial electronics, semiconductor device manufacturing, power supply design, and embedded system applications requiring robust and reliable MOSFET performance. ROHM’s high-quality semiconductor technology ensures durability and consistency in various demanding environments.

Features a 3-pin SOT-323 surface mount package. Maximum continuous drain current: 4 A. Drain-source voltage up to 12 V. Operating temperature range from -55°C to 150°C. Low Rds(on) resistance of 68 mΩ. 800 mW maximum power dissipation.

Typical gate charge of 37 nC at Vgs. Compact size suitable for dense PCB layouts. Explore the Electronics & Electricals category at EnvMart for a wide range of semiconductor components including MOSFETs like the ROHM RAF040P01TCL.