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ROHM N-Channel MOSFET 2.5 A 20 V Surface Mount TUMT Package 3-Pin Low On-Resistance RUF025N02FRATL
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RUF025N02FRATL |
| Mount Type | Surface |
| Series | RUF |
| Maximum Operating Temperature | 175°C |
| Package Type | TUMT |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 540mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 0.8W |
| Typical Gate Charge Qg @ Vgs | 5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a compact TUMT package suitable for space-constrained applications.
- Maximum continuous drain current of 2.5 amperes ensuring reliable performance.
- Maximum drain-source voltage rating is 20 volts for low voltage switching.
- Low typical gate charge of 5 nC for fast switching speeds.
- Supports continuous operation from −55°C up to 175°C.
- Maximum drain-source resistance of 540 milliohms for efficiency.
- Maximum power dissipation of 0.8 watts in operation.
- Designed for surface mount installation to facilitate automated PCB assembly.
Product Description
ROHM RUF025N02FRATL is a high-performance N-Channel MOSFET designed for switching applications in electronics where compact size and low resistance are critical. Packaged in the small TUMT surface mount package with 3 pins, it supports continuous drain currents up to 2.5 amperes at a maximum drain-source voltage of 20 volts. The device achieves fast switching thanks to its low typical gate charge of 5 nanocoulombs, making it suitable for power management in compact circuits.
This MOSFET operates reliably across a wide temperature range from -55°C to a maximum of 175°C, ensuring stable performance for harsh industrial and automotive electronic environments. The low on-resistance of 540 milliohms minimizes power loss during conduction, supported by a maximum power dissipation rating of 0.8 watts.
ROHM's RUF025N02FRATL MOSFET is RoHS compliant and adheres to the AEC-Q101 quality standard, making it ideal for automotive and industrial applications requiring stringent reliability and environmental compliance. The surface-mount TUMT package enables efficient PCB assembly for volume production.
Compact TUMT 3-pin package suited for space-saving designs. Low on-resistance for efficient conduction and reduced energy loss. Wide operating temperature range supports industrial-grade reliability. Fast switching capability with a typical gate charge of 5 nC.
Suitable for switching in power management circuits. RoHS compliant ensuring environmentally friendly manufacturing. Meets AEC-Q101 standards for automotive quality assurance. Maximum power dissipation of 0.8 W balancing performance and thermal management.
Surface mount type suitable for automated manufacturing processes.
This MOSFET is applicable across electronic, industrial, automotive, and power management systems requiring highly efficient and compact semiconductor switching components. It supports circuit designs demanding low switching losses and robust durability. Explore additional ROHM semiconductor products and MOSFETs for varied electrical and power control requirements at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the RUF025N02FRATL is 2.5 amperes.
This model has a maximum drain-source voltage rating of 20 volts.
The typical gate charge for the RUF025N02FRATL is 5 nanocoulombs, which facilitates fast switching speeds.
The maximum power dissipation for this MOSFET is 0.8 watts during operation.
It operates reliably across a temperature range from -55°C to 175°C.
The RUF025N02FRATL is packaged in a compact TUMT surface mount configuration with 3 pins, suitable for space-constrained applications.
Yes, the RUF025N02FRATL is RoHS compliant, ensuring environmentally friendly manufacturing processes.
This model adheres to the AEC-Q101 quality standard, making it suitable for automotive applications.
The maximum drain-source resistance is 540 milliohms, which helps in reducing power loss during conduction.
It is designed for surface mount installation, facilitating automated PCB assembly.
This MOSFET is suitable for switching applications in electronics, industrial, automotive, and power management systems.
The RUF025N02FRATL is an N-channel MOSFET, which is commonly used for efficient switching in circuits.
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