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Nexperia Small Signal NPN Transistor 800 mA, 40 V, 3-Pin SOT-23 Package BSR14,215

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Nexperia Small Signal NPN Transistor 800 mA, 40 V, 3-Pin SOT-23 Package BSR14,215

Name: Nexperia Small Signal NPN Transistor 800 mA, 40 V, 3-Pin SOT-23 Package BSR14,215
Brand: Nexperia
SKU: 189795
Price: 0.24 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	BSR14,215
Width	2.5mm
Mount Type	Surface
Series	BSR14
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	35
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	75V
Maximum Power Dissipation Pd	250mW
Maximum DC Collector Current Idc	800mA
Transistor Configuration	Single
Maximum Transition Frequency ft	300MHz
ROHM SST4401HZGT116 Bipolar Transistor, 600 mA NPN, 40 V, 3-Pin SOT-23Brand	ROHM
NXP BSR14,215 NPN Bipolar Transistor, 800 mA, 40 V, 3-Pin TO-236ABBrand	NXP
onsemi BSR14 Transistor, 800 mA NPN, 40 V, 3-Pin SOT-23Brand	onsemi

Key Features

Features a compact 3-pin SOT-23 surface mount package for easy PCB integration.
Offers a maximum power dissipation of 250 mW, suitable for low power applications.
Provides a minimum DC current gain (hFE) of 35 ensuring efficient signal amplification.
Operates reliably across a temperature range from -65°C to 150°C for harsh environments.
Maximum transition frequency is 300 MHz, supporting high-speed switching applications.
Single transistor configuration with NPN polarity ideal for various electronic circuits.
Maximum collector base voltage rated at 75 V and emitter base voltage at 6 V.
Manufactured in China and compliant with RoHS standards for environmental safety.

Product Description

The Nexperia BSR14,215 is a small signal NPN bipolar transistor designed for electronic applications requiring reliable performance with up to 800 mA collector current and 40 V collector emitter voltage. Packaged in a 3-pin SOT-23 surface mount type, it offers a compact form factor suitable for modern PCB designs.

This transistor features a maximum power dissipation of 250 mW and a minimum DC current gain of 35, ensuring an efficient amplification of signals in low power circuits. It is capable of operating effectively within a wide temperature range from -65°C to 150°C, making it suitable for industrial, automotive, and commercial electronics environments.

With a maximum transition frequency of 300 MHz, the BSR14,215 supports high-speed switching and amplification applications. The single transistor NPN configuration is widely used in switching, amplification, and signal conditioning circuits.

The device dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height contribute to a compact design, facilitating integration in space-constrained installations. Compliance with RoHS standards assures environmentally friendly manufacturing and usage.

Compact 3-pin SOT-23 surface mount package. Maximum DC collector current of 800 mA. Maximum collector emitter voltage of 40 V. Power dissipation up to 250 mW. Minimum DC current gain (hFE) of 35. Operational temperature range from -65°C to 150°C.

High transition frequency of 300 MHz. Manufactured in China with RoHS compliance.

This transistor is ideal for industrial, embedded system design, automotive electronics, consumer electronic devices, communication equipment, and other applications that require compact reliable bipolar transistors.

Explore more Nexperia Bipolar Transistors and find suitable components for your electronic design requirements at EnvMart.