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Nexperia Transistor Maximum DC Collector Current 100 mA NPN 30 V 3-Pin UMT BC849CW,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BC849CW,115
Width 2.2mm
Mount Type Surface
Series BC849W
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 420
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC848CWT1G Transistor, 100 mA NPN, 30 V, 3-Pin SOT-323Brand onsemi

Key Features

  • This transistor supports a maximum collector base voltage of 30 V and a maximum emitter base voltage of 5 V.
  • It has a minimum DC current gain (hFE) of 420 for efficient signal amplification.
  • Power dissipation is rated at 200 mW for reliable performance.
  • The device operates within a temperature range of -65°C to 150°C, suitable for varied environments.
  • Transition frequency is rated at 100 MHz, making it suitable for high-frequency applications.
  • Compact package size with 2.2 mm length, 2.2 mm width, and 1.1 mm height supports surface mounting.
  • Complies with RoHS standards and meets Automotive Standard AEC-Q101 for quality assurance.

Product Description

The Nexperia BC849CW,115 transistor is a high-quality small signal NPN bipolar transistor designed for efficient switching and amplification in electronic circuits. It supports a maximum DC collector current of 100 mA and a maximum collector emitter voltage of 30 V, ensuring reliable operation in low to medium power applications. Packaged in a 3-pin UMT surface mount device, the compact footprint makes it ideal for space-constrained designs.

Featuring a minimum DC current gain (hFE) of 420, this transistor offers stable amplification performance across a wide temperature range from -65°C to 150°C. Its maximum power dissipation rating of 200 mW ensures durability during continuous operation. The device also delivers a maximum transition frequency of 100 MHz, suitable for switching and high-frequency communication circuits.

Designed with compliance to RoHS environmental standards and automotive-grade AEC-Q101 certification, this transistor guarantees quality and safety for automotive and industrial applications. Its package dimensions measure 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height, making it compatible with automated surface-mount assembly processes.

This transistor supports a maximum collector base voltage of 30 V and maximum emitter base voltage of 5 V. Its compact 3-pin UMT package facilitates easy integration in modern PCB layouts. Minimum DC current gain of 420 ensures effective signal amplification.

Operating temperature range from -65°C to 150°C accommodates extreme environmental conditions. Maximum power dissipation rating of 200 mW delivers dependable performance. Transition frequency rated at 100 MHz suitable for high-speed switching applications.

RoHS compliant and Automotive Standard AEC-Q101 certified device.

This bipolar transistor is widely used in electronics design, automotive electronics, communication modules, industrial control systems, and signal processing circuits. Its robust design and surface mount format enable mass production and efficient circuit integration.

Explore more high-quality Bipolar Transistors and semiconductor components in the Electronics & Electricals category at EnvMart to enhance your circuit designs with trusted industry-standard parts.

Nexperia Transistor Maximum DC Collector Current 100 mA NPN 30 V 3-Pin UMT BC849CW,115
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

The maximum collector-emitter voltage rating is 30 V.

This model has a minimum DC current gain (hFE) of 420.

The power dissipation rating for this transistor is 200 mW.

It operates within a temperature range of -65°C to 150°C.

The transition frequency is rated at 100 MHz, making it suitable for high-frequency applications.

The package dimensions are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

This transistor supports surface mounting.

It complies with Automotive Standard AEC-Q101.

The maximum emitter-base voltage is 5 V.

This transistor is suitable for applications in electronics design, automotive electronics, communication modules, and industrial control systems.

This device complies with RoHS standards.

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