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Nexperia Small Signal NPN Transistor 100mA 30V 3-Pin Surface Mount UMT BC849CW,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BC849CW,115
Width 2.2mm
Mount Type Surface
Series BC849W
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 420
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 100mA ensures reliable performance.
  • Maximum collector-emitter voltage of 30V suitable for low power switching.
  • High minimum DC current gain hFE of 420 for amplification applications.
  • Maximum power dissipation of 200mW supports small signal use cases.
  • Operating temperature range from -65°C to 150°C for varied environments.
  • Compact dimensions with 2.2mm length, 2.2mm width, and 1.1mm height.
  • Compliant with RoHS and automotive AEC-Q101 standards assuring quality and reliability.
  • Designed with single transistor configuration and NPN polarity.

Product Description

The Nexperia BC849CW,115 is a small signal NPN bipolar transistor designed for low power switching and amplification in electronic circuits. It features a maximum DC collector current of 100mA and a maximum collector-emitter voltage of 30V, making it suitable for a broad range of electronic component applications. Packaged in a compact 3-pin surface mount UMT package, this transistor supports efficient automated PCB assembly.

Its high minimum DC current gain of 420 provides excellent amplification capabilities while maintaining low power dissipation capped at 200mW. The transistor operates reliably over a wide temperature range from -65°C to 150°C. The compact physical dimensions, 2.2mm in length and width with a 1.1mm height, allow it to fit into tight spaces in modern circuit designs.

The component adheres to RoHS environmental standards and the automotive AEC-Q101 standard, ensuring high quality and durability for industrial, automotive, and consumer electronics applications. This transistor's single transistor configuration and NPN polarity make it a versatile choice for discrete semiconductor needs in electronics manufacturing and repairs.

Maximum DC collector current of 100mA. Maximum collector-emitter voltage of 30V. High minimum DC current gain (hFE) of 420. Maximum power dissipation of 200mW. Operating temperature range of -65°C to 150°C. Compact 3-pin surface mount UMT package dimensions: 2.2mm x 2.2mm x 1.1mm.

RoHS compliant and meets automotive AEC-Q101 standard. Designed for electronic applications such as switching and amplification.

This transistor is ideal for industrial electronics, automotive systems, manufacturing assembly lines, and laboratory electronic development. Browse Nexperia products and other Bipolar Transistors on EnvMart for more professional electronic components.

Nexperia Small Signal NPN Transistor 100mA 30V 3-Pin Surface Mount UMT BC849CW,115
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Frequently Asked Questions

The maximum DC collector current for the Nexperia BC849CW,115 is 100mA.

This transistor has a maximum collector-emitter voltage of 30V.

The minimum DC current gain (hFE) for the BC849CW,115 is 420, making it suitable for amplification applications.

The maximum power dissipation for this model is 200mW.

The operating temperature range for the BC849CW,115 is from -65°C to 150°C.

The dimensions of the UMT package are 2.2mm in length, 2.2mm in width, and 1.1mm in height.

This model uses a 3-pin surface mount UMT package.

Yes, the BC849CW,115 is RoHS compliant and meets the automotive AEC-Q101 standard.

The transistor configuration for this model is single, with NPN polarity.

The maximum transition frequency for the BC849CW,115 is 100MHz.

The maximum emitter-base voltage (VEBO) for this model is 5V.

This transistor is designed for low power switching and amplification in electronic circuits.

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