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Nexperia Small Signal NPN Transistor 500 mA 45 V 3-Pin SOT-23 BC817-25,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.11mm
Length 3mm
Model BC817-25,215
Width 2.5mm
Mount Type Surface
Series BC817
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 160
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC817-25LT1G Transistor, 500 mA NPN, 45 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Supports maximum DC collector current of 500 milliamps.
  • Rated for maximum collector emitter voltage of 45 volts.
  • Comes in a compact 3-pin SOT-23 surface mount package.
  • Has a minimum DC current gain (hFE) of 160 ensuring reliable amplification.
  • Operates at a maximum frequency of 100 MHz suitable for high-speed circuits.
  • Maximum power dissipation is 250 milliwatts, ideal for small signal use.
  • Temperature range from -65°C to 150°C ensures wide operational reliability.
  • Meets RoHS compliance and automotive standard AEC-Q101 specification.

Product Description

Nexperia BC817-25,215 Small Signal NPN Transistor is a high-quality bipolar transistor designed for a range of electronic applications including amplification and switching in industrial, automotive, and consumer electronics.

This 3-pin transistor is housed in a compact SOT-23 surface mount package, with dimensions approximately 3 mm in length, 2.5 mm in width, and 1.11 mm in height, making it suitable for densely packed circuit boards.

It supports a maximum DC collector current of 500 mA and a collector-emitter voltage of 45 V, with a maximum power dissipation of 250 mW, ensuring robust performance for small signal applications. The device features a minimum DC current gain (hFE) of 160 and can operate reliably across a wide temperature range from -65°C to 150°C. Its maximum transition frequency of 100 MHz enables use in moderate frequency switching and amplification circuits.

The transistor complies with RoHS environmental standards and is qualified under the automotive standard AEC-Q101, making it suitable for automotive and industrial uses. It is manufactured in China with the proven quality reliability of Nexperia components.

Supports maximum DC collector current of 500 milliamps. Rated for maximum collector emitter voltage of 45 volts. Comes in a compact 3-pin SOT-23 surface mount package. Has a minimum DC current gain (hFE) of 160 ensuring reliable amplification.

Operates at a maximum frequency of 100 MHz suitable for high-speed circuits. Maximum power dissipation is 250 milliwatts, ideal for small signal use. Temperature range from -65°C to 150°C ensures wide operational reliability.

Meets RoHS compliance and automotive standard AEC-Q101 specification. Dimensions are approximately 3 mm length, 2.5 mm width, and 1.11 mm height. Single transistor configuration with NPN polarity for versatile circuit integration.

This transistor is ideal for industrial electronic manufacturing, automotive electronics, consumer electronic devices, and laboratory prototyping setups. It can be integrated into amplification, switching, and signal processing circuits for reliable performance.

Explore more electronic components and Bipolar Transistors with Nexperia models in our detailed catalog.

Nexperia Small Signal NPN Transistor 500 mA 45 V 3-Pin SOT-23 BC817-25,215
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Frequently Asked Questions

The maximum DC collector current for this model is 500 milliamps.

It is rated for a maximum collector-emitter voltage of 45 volts.

This transistor comes in a compact 3-pin SOT-23 surface mount package.

The minimum DC current gain (hFE) is 160, ensuring reliable amplification.

It operates at a maximum transition frequency of 100 MHz, suitable for high-speed circuits.

The dimensions are approximately 3 mm in length, 2.5 mm in width, and 1.11 mm in height.

It operates within a temperature range from -65°C to 150°C, ensuring wide operational reliability.

This transistor meets RoHS compliance and is qualified under the automotive standard AEC-Q101.

The maximum power dissipation is 250 milliwatts, making it suitable for small signal applications.

It features a single transistor configuration with NPN polarity for versatile circuit integration.

The maximum emitter-base voltage (VEBO) is 5 volts.

This model is suitable for amplification, switching, and signal processing circuits in industrial, automotive, and consumer electronics.

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