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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | TIP125 |
| Mount Type | Through Hole |
| Series | TIP125 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 5A |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 60V |
| Maximum Collector Cut-off Current | 0.2mA |
| Maximum Power Dissipation Pd | 65W |
| STMicroelectronics 1 Darlington Transistor PNP, 5 A 60 V HFE | 1000, 3-Pin TO-220 |
STMicroelectronics TIP125 is a high-performance PNP Darlington Transistor designed for power electronics applications. It supports a maximum continuous collector current of 5 A and a collector-emitter voltage of 60 V, making it ideal for medium power amplification and switching applications.
This transistor features a minimum DC current gain (hFE) of 1000, delivering excellent amplification capability, and is housed in a robust TO-220 through-hole package with 3 pins for secure mounting on circuit boards.
Engineered to operate reliably in harsh conditions, the TIP125 supports a wide operating temperature range from -65°C to 150°C, suitable for industrial, automotive, and other demanding environments.
The maximum power dissipation of 65 W enables it to handle significant loads without degradation. The device’s maximum emitter-base voltage is 5 V, and the collector-base voltage rating is 60 V, ensuring safe operational margins.
Its compact form factor with dimensions of 10.4 mm length and 9.15 mm height facilitates integration into complex circuits with space constraints. The single transistor element per chip guarantees consistent switching and amplification performance.
Maximum continuous collector current of 5 A. Collector-emitter voltage rating of 60 V. High current gain with minimum hFE of 1000. Durable TO-220 3-pin through-hole package. Maximum power dissipation of 65 W. Designed for PNP transistor polarity.
Wide temperature range: -65°C to 150°C. Emitter-base voltage up to 5 V. Collector-base voltage up to 60 V. Compact size: 10.4 mm length and 9.15 mm height.
This transistor is suitable for industrial electronics, power amplification, motor control, and other applications requiring reliable medium power handling. With its robust electrical characteristics and form factor, it supports enhanced circuit efficiency and durability.
Explore more STMicroelectronics transistors and semiconductor products at EnvMart for your electronics manufacturing and design needs.
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