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Microchip N-Channel MOSFET, Maximum Continuous Drain Current 140 A, Maximum Drain Source Voltage 12 V, 4-Pin MSC035SMA070B4

Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Model MSC035SMA070B4
Mount Type Through Hole
Series MSC035SMA070B4
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 140A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 8Ω
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 99nC
Maximum Gate Source Voltage Vgs 2V
Forward Voltage Vf 1.8V

Key Features

  • Designed for through hole mounting in electronic circuits.
  • Maximum operating temperature of 175°C for stable high-temperature performance.
  • Low gate charge of 99nC allowing fast switching.
  • Maximum drain source resistance of 8Ω enhances efficiency.
  • Forward voltage of 1.8 V ensures efficient conduction.
  • Complies with RoHS standards for environmental safety.
  • Operating temperature range from -55°C to 175°C supports versatile applications.
  • Robust power dissipation rating of 1.6 W maintains device reliability.

Product Description

Microchip MSC035SMA070B4 is a high-performance N-Channel MOSFET designed for power electronic applications requiring efficient switching and high current handling capabilities. Featuring a maximum continuous drain current of 140 A and drain source voltage of 12 V, it is housed in a standard 4-pin TO-247 package suitable for through hole mounting. Its low typical gate charge of 99nC contributes to fast switching speeds while maintaining low internal gate resistance.

The device ensures reliable operation over a wide temperature range from -55°C to a maximum of 175°C, making it ideal for demanding industrial environments and high-temperature applications. With a maximum drain-source resistance of 8Ω and forward voltage of 1.8 V, it balances conduction efficiency and power losses effectively. The maximum power dissipation rating of 1.6 W supports small-power configurations where thermal management is critical.

Microchip's silicon carbide power MOSFET technology provides enhanced performance compared to traditional silicon MOSFETs and IGBTs, lowering total cost of ownership in high voltage and high power applications. The MOSFET is fully RoHS compliant, demonstrating adherence to environmental standards.

This MOSFET is well suited for industrial, laboratory, and power management applications including switching power supplies, motor controllers, and other discrete semiconductor roles in electronics and electrical equipment.

Designed for through hole mounting in electronic circuits. Supports continuous drain current up to 140 A. Wide operating temperature range from -55°C to 175°C. Low gate charge at typical gate-source voltage for efficient switching.

Compliant with RoHS environmental standards. Efficient conduction with 1.8 V forward voltage. Robust TO-247 package with 4 pins for secure mounting. Explore the range of Microchip MOSFETs and other semiconductor components on EnvMart for your electronic design and industrial power management needs.

Microchip N-Channel MOSFET, Maximum Continuous Drain Current 140 A, Maximum Drain Source Voltage 12 V, 4-Pin MSC035SMA070B4
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