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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC035SMA170B |
| Mount Type | Through Hole |
| Series | MSC35SMA170B |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 178nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
Microchip MSC035SMA170B is an advanced silicon carbide N-Channel Power MOSFET designed to deliver superior switching performance and efficiency in high voltage applications. With a continuous drain current of 140 A and maximum drain-source voltage of 12 V, this device supports robust power handling and stable operation in demanding industrial environments.
The device utilizes a TO-247 through-hole package, enabling ease of installation and thermal management. It exhibits low gate charge (178 nC typical at Vgs), which facilitates fast switching and reduced switching losses, making it suitable for power converters, motor drives, and automotive applications.
Microchip's MSC35SMA170B MOSFET operates reliably at high junction temperatures up to 175 °C, ensuring durability and longevity under thermal stress. The device’s robust body diode provides fast and reliable reverse recovery characteristics with superior avalanche ruggedness, enhancing circuit reliability.
Its compliance with RoHS standards assures environmental friendliness without compromising performance. The operating temperature range from -55 °C to 175 °C allows use in various industrial, electronic, and automotive environments.
The low maximum drain-source resistance (8 Ω) and forward voltage (1.8 V) contribute to efficient power management and minimal losses. This MOSFET is ideal for power switching, motor control, power supplies, and industrial automation tasks requiring reliable high current handling and fast switching speeds.
Connect with EnvMart for a comprehensive range of Microchip semiconductors and power devices optimized for your industrial and electronic design needs. Designed for high voltage applications and enhanced performance over silicon MOSFETs and IGBTs.
Low capacitances and gate charge enabling fast switching speeds. Stable operation at high junction temperatures up to 175 degrees Celsius. Features a reliable body diode with superior avalanche ruggedness. RoHS compliant for environmental safety.
Mount type is through hole, suitable for robust assembly. Maximum power dissipation rating of 1.6 watts. Minimum operating temperature down to minus 55 degrees Celsius. Maximum gate-source voltage rating of 2 volts ensures safe gate operation.
Forward voltage drop of 1.8 volts provides efficient conduction. Explore more Microchip semiconductor solutions available at EnvMart for industrial, automotive, and high-performance electronics applications.
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