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Nexperia Bipolar Transistor PNP -6 A, -100 V, 3-Pin TO-252 Surface Mount Package MJD42C-QJ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model MJD42C-QJ
Mount Type Surface
Series MJD42C-Q
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -100V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 6V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -6A
Transistor Configuration NPN

Key Features

  • The transistor is housed in a TO-252 (DPAK) surface mount plastic package.
  • It features a minimum DC current gain (hFE) of 30 for reliable amplification.
  • Provides a maximum emitter base voltage (VEBO) of 6 V.
  • Operates efficiently within temperature range from -55°C to 150°C.
  • Complies with RoHS standards ensuring environmental safety.
  • Qualified to automotive grade standard AEC-Q101 suitable for automotive applications.
  • Includes 3 pins for easy surface mounting on PCBs.
  • Designed to offer high thermal power dissipation and fast switching speeds.

Product Description

The Nexperia MJD42C-QJ bipolar transistor is a PNP type discrete semiconductor device designed for power applications. It is contained within a TO-252 (also known as DPAK or SOT428C) surface-mount plastic package optimized for thermal management and compact PCB assembly.

This transistor is characterized by a maximum DC collector current (Idc) of -6 amperes and a maximum collector emitter voltage (Vceo) of -100 volts, suitable for a variety of high-power switching and amplification uses in industrial, automotive, and electronic applications.

It offers a minimum DC current gain (hFE) of 30, enabling efficient signal amplification, and a maximum emitter base voltage (VEBO) of 6 volts, defining safe operation limits. The device is rated for operation in extreme temperature conditions, from a minimum of -55°C up to a maximum of 150°C, enhancing its reliability under harsh environmental conditions.

The transistor complies with Restriction of Hazardous Substances (RoHS) directives, reinforcing its environmental compliance and sustainability. Additionally, it meets the automotive industry standard AEC-Q101, indicating robustness for automotive electronic systems.

Featuring three pins configured for surface mounting, the MJD42C-QJ facilitates easy integration into printed circuit boards, supporting high thermal power dissipation and fast switching speeds. This makes it well suited for use cases in industrial electronics, automotive control systems, power supply regulation, and other electronic circuit designs requiring reliable PNP bipolar transistors.

The transistor’s package and configuration allow for efficient heat dissipation and compact assembly. Its certification to automotive standards ensures safe and durable operation in vehicle electronic systems. The transistor's electrical characteristics align with demands for power amplification and switching performance.

Surface mount technology (SMT) compatibility supports modern PCB manufacturing processes. Suitable for repairing or designing automotive and industrial electronic circuits. Available for purchase in reels, facilitating large volume manufacturing integration.

With its performance and packaging specifications, the Nexperia MJD42C-QJ bipolar transistor is a versatile component in the field of semiconductor discrete devices, well suited for power, automotive, and industrial electronics sectors.

Explore the full range of Bipolar Transistors and related semiconductor components at EnvMart for reliable and quality-assured electronic component sourcing.

Nexperia Bipolar Transistor PNP -6 A, -100 V, 3-Pin TO-252 Surface Mount Package MJD42C-QJ
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for the MJD42C-QJ is -100 volts.

This model has a minimum DC current gain (hFE) of 30, which supports efficient signal amplification.

It operates efficiently within a temperature range from -55°C to 150°C.

The transistor is housed in a TO-252 (DPAK) surface mount plastic package.

This model features three pins, allowing for easy surface mounting on printed circuit boards (PCBs).

The maximum DC collector current (Idc) for the MJD42C-QJ is -6 amperes.

It complies with the automotive standard AEC-Q101, suitable for automotive applications.

The maximum emitter base voltage (VEBO) for the MJD42C-QJ is 6 volts.

Yes, it complies with RoHS standards, ensuring environmental safety.

This transistor is suitable for high-power switching and amplification uses in industrial, automotive, and electronic applications.

The transistor configuration for this model is PNP, which is a type of bipolar transistor.

The country of origin for this transistor is India.

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