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Nexperia Bipolar Transistor 2 A NPN 50 V 3-Pin DPAK Surface Mount MJD2873-QJ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model MJD2873-QJ
Mount Type Surface
Series MJD2873-Q
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 120
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 2A
Transistor Configuration NPN

Key Features

  • The transistor supports a maximum DC collector current of 2 amperes.
  • It features a maximum collector-emitter voltage rating of 50 volts.
  • Package type is TO-252 (DPAK) suitable for surface mounting.
  • Minimum DC current gain (hFE) is 120 ensuring efficient amplification.
  • Maximum emitter-base voltage of 6 volts protects device operations.
  • It operates reliably in temperatures from -55°C to 150°C.
  • The device is RoHS compliant and meets automotive standard AEC-Q101.
  • Its 3-pin configuration is optimized for quick switching and low saturation voltage.

Product Description

Nexperia MJD2873-QJ Bipolar Transistor is a robust NPN transistor featuring a maximum collector current of 2 amperes and a collector-emitter voltage rating of 50 volts, housed in a surface-mount TO-252 (DPAK) package with 3 pins. It is designed to deliver high power dissipation with improved energy efficiency through reduced heat generation, making it suitable for demanding applications.

This transistor exhibits fast switching speeds and low collector-emitter saturation voltage which are critical for power management and signal amplification in various electronic circuits. Its high DC current gain of 120 ensures efficient signal amplification. The component reliably operates over a wide temperature range from -55°C to 150°C, accommodating industrial and automotive environments.

The MJD2873-QJ complies with RoHS directives and is qualified under the automotive AEC-Q101 standard, making it ideal for automotive electronics, industrial controls, and power regulation systems. The surface-mounted DPAK form factor allows compact and efficient PCB layouts, beneficial for modern electronic assemblies.

The transistor supports a maximum DC collector current of 2 amperes. Maximum collector-emitter voltage is 50 volts, allowing robust operation. Surface mount TO-252 (DPAK) package ensures compact design and improved thermal management.

The device features a minimum DC current gain (hFE) of 120 for effective signal amplification. Emitter-base voltage maximum of 6 volts safeguards device integrity. Operating temperature range from -55°C to 150°C supports wide environmental conditions.

Compliance with RoHS and automotive AEC-Q101 standards ensures quality and reliability. 3-pin configuration is suitable for rapid switching power applications.

This bipolar transistor is extensively used in electronic circuitry requiring efficient switching, signal amplification, and power regulation, including automotive controls, industrial automation, and consumer electronics. For more semiconductor components and Bipolar Transistors, explore the comprehensive range at EnvMart.

Nexperia Bipolar Transistor 2 A NPN 50 V 3-Pin DPAK Surface Mount MJD2873-QJ
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Frequently Asked Questions

The maximum DC collector current for this transistor is 2 amperes.

It features a maximum collector-emitter voltage rating of 50 volts.

The transistor is housed in a surface-mount TO-252 (DPAK) package.

The minimum DC current gain (hFE) is 120, ensuring efficient amplification.

It operates reliably in temperatures ranging from -55°C to 150°C.

The maximum emitter-base voltage is 6 volts, which protects device operations.

Yes, it is RoHS compliant and meets the automotive standard AEC-Q101.

This model has a 3-pin configuration, optimized for quick switching.

It is suitable for automotive electronics, industrial controls, and power regulation systems.

The transistor configuration is NPN, which is common for amplification and switching applications.

The country of origin for this transistor is India.

The DPAK package allows for compact designs and improved thermal management, beneficial for modern electronic assemblies.

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