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Toshiba Diode Switching 250 V 100 mA 2-Pin SOD-323 1SS403(TPH3,F)
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 0.9mm |
| Length | 1.7mm |
| Model | 1SS403(TPH3,F) |
| Width | 1.25mm |
| Mount Type | Surface |
| Series | 1SS403 |
| Maximum Operating Temperature | 125°C |
| Package Type | SOD-323 |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 100mA |
| Peak Reverse Repetitive Voltage Vrrm | 250V |
| Diode Configuration | Single |
| Rectifier Type | Switching |
| Peak Reverse Current Ir | 1μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 2A |
| Maximum Forward Voltage Vf | 1.2V |
Key Features
- This diode features a 2-pin SOD-323 surface mount package for compact PCB designs.
- It has a maximum forward voltage drop of 1.2 V ensuring efficient switching performance.
- The peak non-repetitive forward surge current rating is 2 A for transient handling.
- Operational temperature range supports up to 125°C for reliable use in various environments.
- Rated peak reverse current is extremely low at 1 μA, minimizing leakage.
- Its compact dimensions of 1.7 mm length, 1.25 mm width, and 0.9 mm height allow integration in dense circuits.
- Manufactured in Japan, assuring quality and consistency.
- Ideal for electronics, power management, and switching applications.
Product Description
Toshiba 1SS403(TPH3,F) switching diode is designed for robust semiconductor switching applications offering 250 V peak reverse repetitive voltage and 100 mA maximum continuous forward current capability.
Featuring a surface mount SOD-323 package with compact dimensions (1.7 mm length, 1.25 mm width, 0.9 mm height), this diode enables high density PCB layouts and efficient thermal performance.
With a low maximum forward voltage of 1.2 V and a peak non-repetitive forward surge current of 2 A, the 1SS403(TPH3,F) excels in transient surge handling and switching efficiency. The device operates reliably up to 125°C maximum operating temperature, making it suitable for demanding industrial and consumer electronics environments.
The diode structure is single configuration switching type with an extremely low 1 μA peak reverse current to minimize leakage current losses during operation. Manufactured in Japan, this Toshiba diode provides trusted quality for electronic circuits requiring discrete semiconductor switching components.
This diode features a 2-pin SOD-323 surface mount package for compact PCB designs. It has a maximum forward voltage drop of 1.2 V ensuring efficient switching performance. The peak non-repetitive forward surge current rating is 2 A for transient handling.
Operational temperature range supports up to 125°C for reliable use in various environments. Rated peak reverse current is extremely low at 1 μA, minimizing leakage. Its compact dimensions of 1.7 mm length, 1.25 mm width, and 0.9 mm height allow integration in dense circuits.
Manufactured in Japan, assuring quality and consistency. Ideal for electronics, power management, and switching applications.
This diode is widely applicable in electronics manufacturing, power management circuits, switching regulators, automotive electronics, consumer devices, and industrial automation for effective voltage and current control.
Browse more Semiconductor Diodes and switching components on EnvMart for extensive industry-grade electronic solutions.
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Frequently Asked Questions
The maximum forward voltage drop of this diode is 1.2 V, ensuring efficient switching performance.
This model has a peak reverse repetitive voltage rating of 250 V, suitable for various electronic applications.
The diode can handle a maximum continuous forward current of 100 mA.
The peak non-repetitive forward surge current rating is 2 A, allowing for effective transient handling.
The diode has compact dimensions of 1.7 mm in length, 1.25 mm in width, and 0.9 mm in height.
It operates reliably up to a maximum temperature of 125°C, making it suitable for various environments.
This model features a 2-pin SOD-323 surface mount package, ideal for compact PCB designs.
The rated peak reverse current for this diode is extremely low at 1 μA, minimizing leakage during operation.
It is widely applicable in electronics manufacturing, power management circuits, switching regulators, automotive electronics, consumer devices, and industrial automation.
This diode features a single configuration switching type, designed for robust semiconductor switching applications.
It is manufactured in Japan, ensuring quality and consistency in its performance.
The rectifier type of this diode is switching, suitable for various electronic applications.
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