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| Country of Origin | Malaysia |
|---|---|
| Brand | Nexperia |
| Height | 0.95mm |
| Length | 2.2mm |
| Model | BCM857BS,115 |
| Width | 2.2mm |
| Mount Type | Surface |
| Series | BCM857BS |
| Maximum Operating Temperature | 150°C |
| Package Type | UMT |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | -45V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 300mW |
| Maximum DC Collector Current Idc | -100mA |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 175MHz |
| ROHM UMT1NTN Transistor, -150 mA PNP, -50 V, 6-Pin UMTBrand | ROHM |
Nexperia BCM857BS,115 small signal PNP bipolar transistor is designed for surface mount technology in various electronic components. Operating with a maximum DC collector current of -100 mA and a maximum collector emitter voltage of -45 V, it is built to deliver reliable switching and amplification in compact circuits.
This transistor features a 6-pin UMT package type, facilitating effective board space utilization in electronic assemblies. The transistor's isolated configuration ensures stable operation with a maximum collector base voltage of 50 V and a maximum emitter base voltage of 5 V, making it suitable for diverse discrete semiconductor applications.
The device operates efficiently across a broad temperature range from -65°C minimum to 150°C maximum, suitable for automotive and industrial electronics environments. It has a power dissipation capacity of 300 milliwatts and a transition frequency of 175 MHz, enabling high-speed switching performance.
Designed to meet RoHS compliance and automotive AEC-Q101 standards, the BCM857BS,115 transistor guarantees environmental and quality standards adherence. Its physical dimensions are compact with a length and width of 2.2 mm and a height of 0.95 mm, enabling its use in space-constrained applications.
This transistor is ideal for various industrial, automotive, and commercial electronic applications requiring robust PNP transistor characteristics with surface mount convenience. As a Malaysian-origin product, it combines quality manufacturing with compliance standards.
The transistor features isolated configuration for reliable electrical characteristics. Maximum collector base voltage rating is 50 V, suitable for various switching applications. Offers a minimum DC current gain (hFE) of 200 for efficient amplification.
Suitable for operation in extreme temperature ranges from -65°C to 150°C. Maximum power dissipation is 300 mW with a transition frequency of 175 MHz. Compliant with RoHS standards and automotive AEC-Q101 qualification ensures reliability.
Compact dimensions with length and width of 2.2 mm and height of 0.95 mm. Explore the full range of Bipolar Transistors and other semiconductor devices on EnvMart for your electronic component requirements.
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