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Nexperia Small Signal PNP Bipolar Transistor, -100 mA DC Collector Current, -45 V Collector Emitter Voltage BCM857BS,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 0.95mm
Length 2.2mm
Model BCM857BS,115
Width 2.2mm
Mount Type Surface
Series BCM857BS
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 200
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 175MHz
ROHM UMT1NTN Transistor, -150 mA PNP, -50 V, 6-Pin UMTBrand ROHM

Key Features

  • The transistor features isolated configuration for reliable electrical characteristics.
  • Maximum collector base voltage rating is 50 V, suitable for various switching applications.
  • Offers a minimum DC current gain (hFE) of 200 for efficient amplification.
  • Suitable for operation in extreme temperature ranges from -65°C to 150°C.
  • Maximum power dissipation is 300 mW with a transition frequency of 175 MHz.
  • Compliant with RoHS standards and automotive AEC-Q101 qualification ensures reliability.
  • Compact dimensions with length and width of 2.2 mm and height of 0.95 mm.

Product Description

Nexperia BCM857BS,115 small signal PNP bipolar transistor is designed for surface mount technology in various electronic components. Operating with a maximum DC collector current of -100 mA and a maximum collector emitter voltage of -45 V, it is built to deliver reliable switching and amplification in compact circuits.

This transistor features a 6-pin UMT package type, facilitating effective board space utilization in electronic assemblies. The transistor's isolated configuration ensures stable operation with a maximum collector base voltage of 50 V and a maximum emitter base voltage of 5 V, making it suitable for diverse discrete semiconductor applications.

The device operates efficiently across a broad temperature range from -65°C minimum to 150°C maximum, suitable for automotive and industrial electronics environments. It has a power dissipation capacity of 300 milliwatts and a transition frequency of 175 MHz, enabling high-speed switching performance.

Designed to meet RoHS compliance and automotive AEC-Q101 standards, the BCM857BS,115 transistor guarantees environmental and quality standards adherence. Its physical dimensions are compact with a length and width of 2.2 mm and a height of 0.95 mm, enabling its use in space-constrained applications.

This transistor is ideal for various industrial, automotive, and commercial electronic applications requiring robust PNP transistor characteristics with surface mount convenience. As a Malaysian-origin product, it combines quality manufacturing with compliance standards.

The transistor features isolated configuration for reliable electrical characteristics. Maximum collector base voltage rating is 50 V, suitable for various switching applications. Offers a minimum DC current gain (hFE) of 200 for efficient amplification.

Suitable for operation in extreme temperature ranges from -65°C to 150°C. Maximum power dissipation is 300 mW with a transition frequency of 175 MHz. Compliant with RoHS standards and automotive AEC-Q101 qualification ensures reliability.

Compact dimensions with length and width of 2.2 mm and height of 0.95 mm. Explore the full range of Bipolar Transistors and other semiconductor devices on EnvMart for your electronic component requirements.

Nexperia Small Signal PNP Bipolar Transistor, -100 mA DC Collector Current, -45 V Collector Emitter Voltage BCM857BS,115
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Frequently Asked Questions

The maximum collector emitter voltage for this model is -45 V.

This transistor offers a minimum DC current gain (hFE) of 200.

The dimensions of this model are 2.2 mm in length and width, with a height of 0.95 mm.

The maximum power dissipation for the BCM857BS,115 is 300 mW.

It operates efficiently across a temperature range from -65°C to 150°C.

This transistor uses a 6-pin UMT package type, suitable for surface mount technology.

The maximum collector base voltage rating for this model is 50 V.

It complies with the automotive AEC-Q101 standard.

The transition frequency of this transistor is 175 MHz.

The maximum DC collector current for the BCM857BS,115 is -100 mA.

Yes, this model is compliant with RoHS standards.

The configuration of this transistor is isolated, which ensures stable operation.

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