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Nexperia Silicon Junction Switching Diode Single 200 mA 75 V 2-Pin SOD-323 BAS416,115

Category Switching Diode Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.05mm
Length 1.8mm
Model BAS416,115
Width 1.35mm
Mount Type Surface
Series BAS416
Maximum Operating Temperature 150°C
Package Type SOD-323
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 250mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 200mA
Maximum Peak Reverse Repetitive Voltage Vrrm 75V
onsemi Switching Diode, Single, 200 mA, 2-Pin 70 V SOD-323 MMDL6050T1GBrand onsemi

Key Features

  • Supports high-density circuit designs with low leakage current.
  • Features low capacitance suitable for high switching speeds.
  • Rated for maximum power dissipation of 250 mW for reliable operation.
  • Operating temperature range from -65°C to 150°C ensures durability.
  • Compact SOD-323 surface mount package with 1.8 mm length and 1.35 mm width.
  • Peak non-repetitive forward surge current capability of 4 A for transient conditions.
  • Maximum forward voltage of 1.25 V supports efficient switching.
  • Designed for discrete semiconductor applications in electronic circuits.

Product Description

Nexperia BAS416,115 Silicon Junction Switching Diode is a reliable discrete semiconductor component designed for electronic and power circuits requiring precise switching capabilities. It is a single diode with a maximum forward current of 200 mA and a peak reverse voltage rating of 75 V, making it suitable for compact high-density circuit applications.

This diode is housed in a surface mount SOD-323 package with dimensions of 1.8 mm length, 1.35 mm width, and 1.05 mm height, enabling space-saving PCB layouts. It features low leakage current and low capacitance, ensuring fast switching speeds and efficient performance in switching and signal applications.

The diode supports a peak non-repetitive forward surge current of 4 A and dissipates power up to 250 mW, allowing it to handle transient electrical loads effectively. The device operates reliably in temperature ranges from -65°C to 150°C, suitable for various industrial and commercial electronic environments.

Typical uses include switching applications in power supplies, signal processing, and other electronic circuit systems where compact, fast, and reliable semiconductor switching is required.

Supports high-density circuit designs with low leakage current. Features low capacitance for high switching speeds. Maximum power dissipation of 250 mW. Wide operating temperature from -65°C to 150°C. Compact SOD-323 surface mount package dimensions.

Peak non-repetitive forward surge current of 4 A. Maximum forward voltage of 1.25 V for efficiency. Ideal for discrete semiconductor switching applications. Explore more Switching Diodes and semiconductor components at EnvMart for industrial, laboratory, and commercial applications.

Nexperia Silicon Junction Switching Diode Single 200 mA 75 V 2-Pin SOD-323 BAS416,115
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