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Infineon 512 MB CFI Flash Memory 64-Pin BGA 2.7V to 3.6V Industrial Grade S29GL512T11FHIV20

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Infineon 512 MB CFI Flash Memory 64-Pin BGA 2.7V to 3.6V Industrial Grade S29GL512T11FHIV20

Name: Infineon 512 MB CFI Flash Memory 64-Pin BGA 2.7V to 3.6V Industrial Grade S29GL512T11FHIV20
Brand: Infineon
SKU: 161024
Price: 14.33 USD
Availability: InStock

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Category Flash Memory Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1mm
Length	13mm
Model	S29GL512T11FHIV20
Width	11mm
Mount Type	Surface
Series	S29GL512
Maximum Operating Temperature	85°C
Package Type	BGA
Minimum Operating Temperature	-40°C
Memory size	512MB
Interface Type	CFI
Standards/Approvals	RoHS
Pin Count	64
Maximum Supply Voltage	3.6V
Minimum Supply Voltage	2.7V
Organisation	64M x 8 Bit
Number of Bits per Word	8
Maximum Random Access Time	110ns
Number of Words	64M
Wide I/O voltage range (VIO)	1.65 V to VCC

Key Features

Memory capacity of 512MB with a 64M x 8 bit organisation.
Features a 64-pin Ball Grid Array (BGA) surface mount package.
Operates with a wide voltage range from 2.7V to 3.6V.
Industrial temperature range from -40°C to 85°C for robust performance.
Utilizes MirrorBit Eclipse Technology with automatic error correction hardware.
Supports programming in bytes and uniform 128-KB sector erase capability.
Advanced sector protection and one-time programmable memory areas for security.
Maximum random access time of 110 ns enabling fast data retrieval.

Product Description

The Infineon S29GL512T11FHIV20 flash memory offers 512 MB of reliable storage in a compact 64-pin BGA package, suitable for surface mounting in electronic circuits. Designed to operate over an industrial temperature range from -40°C to 85°C, it ensures robust functionality in harsh environments.

This flash memory chip features a 64M x 8 bit organisation and supports the Common Flash Interface (CFI) standard for enhanced interoperability. The device supports a wide voltage supply range from 2.7V to 3.6V and a wide I/O voltage range, enabling flexible integration into various systems.

Employing 64 nm MirrorBit Eclipse Technology, the memory includes automatic error checking and correction with single-bit error correction capabilities to maintain data integrity. Programming is versatile with support for byte-wise operations and uniform sector erases of 128 KB size, allowing efficient memory management.

The device also includes advanced sector protection methods, including volatile and non-volatile protections and four lockable sectors with factory locked and password protected areas, enhancing security for critical data. With a maximum random access time of 110 ns, it delivers fast and efficient data access.

This memory component is ideal for industrial, manufacturing, and embedded electronic applications requiring robust, high-capacity flash storage with secure and reliable performance.

Memory capacity of 512MB with 64M x 8 bit organisation. 64-pin BGA surface mount package optimised for space-saving PCB designs. Wide operating voltage from 2.7V to 3.6V with common flash interface support. Industrial temperature rated from -40°C to +85°C for harsh environment operation.

MirrorBit Eclipse Technology with internal hardware ECC for data reliability. Advanced sector protection with multiple lock regions and OTP array. Fast maximum random access time of 110 ns for high-speed applications. Suitable for industrial, laboratory, embedded systems, and manufacturing use cases.

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