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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 4.58mm |
| Length | 10.67mm |
| Model | FJB102TM |
| Width | 15.88mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Pin Count | 2 |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 80W |
| Transistor Configuration | Dual |
| FJB102 | 100V High Voltage Power Darlington Transistor |
onsemi FJB102TM digital transistor is a 100 V NPN surface mount transistor designed for high voltage power applications. Featuring a dual transistor configuration, this device offers high DC current gain with minimum hFE of 200 and a high gain of hFE=1000 at VCE=4 V and IC=3 A, enabling efficient amplification and switching in electronics circuits.
With a maximum collector-emitter voltage of 100 V and power dissipation up to 80 W, the FJB102TM transistor assures durability and stable performance under demanding conditions. It has a maximum operating temperature of 150°C, making it suitable for industrial environments where temperature resilience is critical.
The transistor employs monolithic construction with built-in base-emitter shunt resistors, providing enhanced protection and reliability. Its low collector-emitter saturation voltage contributes to operational efficiency and reduced power loss in switching applications.
The package dimensions are 10.67 mm in length, 15.88 mm in width, and 4.58 mm in height, facilitating compact and effective PCB layout integration. This 2-pin surface mount device is ideal for discrete semiconductor applications in various electronics and industrial sectors.
Applications include power management, switching circuits, signal amplification, and other general-purpose electronic functions requiring a high voltage, high gain NPN transistor. Manufactured in China under onsemi’s standards, it ensures quality and consistent performance.
High Collector-Emitter Voltage rating at 100 V. Surface mount type with 2-pin configuration. Dual transistor configuration for efficient switching. High DC current gain with hFE minimum 200. Maximum power dissipation of 80 W for robust performance.
Maximum operating temperature up to 150°C. Monolithic construction with built-in base-emitter shunt resistors. Low collector-emitter saturation voltage. Compact dimensions: 10.67 mm length, 15.88 mm width, 4.58 mm height.
Manufactured in China for trusted quality. This product is listed in the EnvMart Digital Transistor category. Explore onsemi and other brands for more semiconductor components.
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