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DiodesZetex 1, 3.6 V Zener Diode 250 mW 5 % Surface Mount 2-Pin X3-DFN0603 GDZ3V6LP3-7

Category Zener Diode Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 0.3mm
Length 0.6mm
Model GDZ3V6LP3-7
Mount Type Surface
Series GDZ
Maximum Operating Temperature 150°C
Package Type X3-DFN0603
Minimum Operating Temperature -55°C
Pin Count 2
Number of Elements per Chip 1
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Test Current It 5mA
Maximum Reverse Leakage Current 10μA
Nominal Zener Voltage Vz 3.6V
Zener Type Ultra Small

Key Features

  • Nominal Zener voltage is 3.6 volts with ±5 % tolerance.
  • Maximum power dissipation of 250 milliwatts supports low power voltage regulation.
  • Compact X3-DFN0603 package with 0.6 mm length and 0.3 mm height for ultra-small surface mounting.
  • Designed with 2 pins and fabricated using an ion-implanted epitaxial wafer process for tight tolerances.
  • Test current is 5 mA with maximum reverse leakage current limited to 10 microamperes.
  • Operating temperature range extends from -55 °C to 150 °C for industrial reliability.
  • Complies with automotive standard AEC-Q101 ensuring suitability for automotive electronics.
  • Ideal for voltage regulation, reference voltage provision, and protection against overvoltage including ESD events.

Product Description

DiodesZetex GDZ3V6LP3-7 is a high precision 3.6 V Zener diode intended for surface mount applications in voltage regulation and protection circuits. It features a compact, ultra-small X3-DFN0603 leadless package measuring 0.6 mm in length and 0.3 mm in height, suitable for modern high-density PCB designs requiring minimal component footprint.

This diode offers a maximum power dissipation of 250 mW and a nominal Zener voltage of 3.6 V with a tight ±5 % tolerance, enabled by an ion-implanted epitaxial wafer process for enhanced voltage stability and accuracy. The device is designed for operation under test currents of 5 mA and limits reverse leakage currents to a maximum of 10 microamperes, supporting stable and reliable performance in voltage reference and stabilization roles.

Operating reliably in a temperature range from -55 °C up to 150 °C, it complies with the automotive standard AEC-Q101, making it well-suited for automotive and industrial electronics applications. It provides effective protection against over-voltage conditions including electrostatic discharge (ESD) and is ideal for use in simple voltage regulators, voltage shifters, and stabilized power supply rails in a plethora of electronics systems.

The GDZ series Zener Diode by DiodesZetex exemplifies cutting-edge semiconductor technology with an ultra-low profile design, ensuring minimal board space consumption without compromising electrical performance.

Nominal Zener voltage is 3.6 volts with ±5 % tolerance. Maximum power dissipation of 250 milliwatts ensures effective voltage regulation. Compact ultra-small leadless X3-DFN0603 surface mount package. Wide operating temperature range from −55 °C to 150 °C for durability.

Automotive standard AEC-Q101 certified. Low maximum reverse leakage current of 10 microamperes. Designed for protection against over-voltage and ESD. Ideal for industrial, automotive, electronic component, and PCB applications.

Explore the extensive range of semiconductor and Zener Diode components at EnvMart for advanced industrial and electronic solutions.

DiodesZetex 1, 3.6 V Zener Diode 250 mW 5 % Surface Mount 2-Pin X3-DFN0603 GDZ3V6LP3-7
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Frequently Asked Questions

The nominal Zener voltage of this diode is 3.6 volts with a tolerance of ±5%.

The maximum power dissipation for this model is 250 milliwatts.

The X3-DFN0603 package measures 0.6 mm in length and 0.3 mm in height.

The operating temperature range for this Zener diode extends from -55 °C to 150 °C.

The test current for this diode is 5 mA.

The maximum reverse leakage current is limited to 10 microamperes.

This diode complies with the automotive standard AEC-Q101.

This model has 2 pins.

It is suitable for voltage regulation, reference voltage provision, and protection against overvoltage including ESD events.

It is fabricated using an ion-implanted epitaxial wafer process for tight tolerances.

This diode supports surface mounting.

There is 1 element per chip in this model.

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