Microchip Electrically Erasable Programmable Logic Device 10 Macro Cells 22 I/O 166 MHz ATF22LV10C-10PU

Microchip ATF22LV10C-10PU Electrically Erasable Programmable Logic Device (PLD) featuring 10 macro cells and 22 user I/O pins. This device supports in-system programmability and re-programmability, enabling versatile and flexible logic design. It operates at a maximum internal frequency of 166 MHz, suitable for high-speed digital applications.

Designed with advanced low-voltage CMOS technology, the device supports an operating voltage range from 3V to 5.5V, making it ideal for industrial and commercial environments with stringent power requirements. The low standby current of approximately 5 microamps enhances battery-powered system efficiency.

The PLD comes in a 24-pin PDIP surface mount package, measuring 32.13 mm in length and 4.95 mm in height, allowing integration into diverse hardware platforms. It offers robust operation within a temperature range from -40°C up to 85°C, ensuring reliability under harsh conditions.

Featuring advanced electrically erasable technology, this device can endure up to 100 erase/write cycles with guaranteed data retention over 20 years. It complies with important industry standards including PCI, Pb/Halide-free/RoHS, and MIL-STD 1835. The device provides comprehensive protection against electrostatic discharge (2,000V) and latchup (200mA), securing device longevity.

Typical propagation delay time is 10 nanoseconds, providing high-speed logic processing for applications in industrial automation, communication equipment, and digital control systems. Manufactured in Taiwan, it is a reliable component for programmable logic solutions.

Supports in-system programming for flexible configuration. Operates over a wide voltage range of 3V to 5.5V for industrial and commercial applications. Provides low standby power consumption of typically 5 microamps. Package type PDIP with 24 pins suitable for surface mount applications.

Guaranteed industrial temperature range from -40°C to 85°C for reliable operation. Reprogrammable flash memory allows up to 100 erase/write cycles with 20-year data retention. High-speed CMOS process delivers maximum propagation delay time of 10 nanoseconds.

Compliant with PCI, Pb/Halide-free/RoHS, and MIL-STD 1835 standards. Includes 2,000V ESD protection and 200mA latchup immunity for enhanced robustness. Manufactured in Taiwan, Province Of China. This device is suitable for industrial, laboratory, manufacturing, and electronic system design applications requiring programmable logic capabilities.

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