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Nexperia Small Signal NPN Transistor, 100 mA, 45 V, 3-Pin SOT-23 BC847B,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC847B,215
Width 1.4mm
Mount Type Surface
Series BC847
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC847BLT1G Transistor, 100 mA NPN, 45 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Supports a maximum DC collector current of 100 mA for small signal applications.
  • Maximum collector emitter voltage (Vceo) rating of 45 V for reliable operation.
  • Compact 3-pin SOT-23 surface mount package suitable for PCB surface mounting.
  • High DC current gain (hFE) minimum of 200 ensures efficient transistor amplification.
  • Wide operating temperature range from -65°C to 150°C for robust performance.
  • Maximum power dissipation of 250 mW for thermal safety and reliability.
  • Meets RoHS standards and automotive standard AEC-Q101 for quality assurance.
  • Maximum transition frequency of 100 MHz supports high frequency applications.

Product Description

Nexperia BC847B,215 small signal NPN transistor designed for electronic, industrial, and automotive applications requiring reliable low-power switching and amplification.

This transistor features a maximum DC collector current of 100 mA and a maximum collector emitter voltage rating of 45 V, fitting compact 3-pin SOT-23 surface mount packaging ideal for high-density PCB designs.

The device offers a high minimum DC current gain (hFE) of 200, enabling efficient signal amplification with low noise. It operates over a wide temperature range from -65°C to 150°C, supporting durability in harsh environments.

Designed to meet RoHS compliance and automotive standard AEC-Q101, the BC847B,215 is suitable for automotive electronics and other demanding industrial sectors. With a maximum power dissipation of 250 mW and a transition frequency of 100 MHz, it performs well in high-frequency switching and signal processing tasks.

The transistor's small dimension profile (3 mm length, 1.4 mm width, 1.1 mm height) makes it optimal for compact circuit requirements. Applications include general-purpose switching, amplification in audio devices, sensor circuits, and automotive electronic controls.

Supports a maximum DC collector current of 100 mA for small signal applications. Maximum collector emitter voltage (Vceo) rating of 45 V for reliable operation. Compact 3-pin SOT-23 surface mount package suitable for PCB surface mounting.

High DC current gain (hFE) minimum of 200 ensures efficient transistor amplification. Wide operating temperature range from -65°C to 150°C for robust performance. Maximum power dissipation of 250 mW for thermal safety and reliability.

Meets RoHS standards and automotive standard AEC-Q101 for quality assurance. Maximum transition frequency of 100 MHz supports high frequency applications. Small and lightweight form factor for compact industrial electronics.

Explore more semiconductor components and Bipolar Transistors on EnvMart for your engineering and manufacturing needs.

Nexperia Small Signal NPN Transistor, 100 mA, 45 V, 3-Pin SOT-23 BC847B,215
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA, making it suitable for small signal applications.

The maximum collector emitter voltage (Vceo) rating is 45 V, ensuring reliable operation in various applications.

It comes in a compact 3-pin SOT-23 surface mount package, which is suitable for PCB surface mounting.

This model has a minimum DC current gain (hFE) of 200, which allows for efficient transistor amplification.

The transistor operates over a wide temperature range from -65°C to 150°C, supporting durability in harsh environments.

The maximum power dissipation for this device is 250 mW, ensuring thermal safety and reliability during operation.

It meets the automotive standard AEC-Q101, ensuring quality assurance for automotive applications.

The maximum transition frequency is 100 MHz, which supports high frequency applications.

The dimensions of this transistor are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The configuration of this transistor is single, which is typical for discrete semiconductor applications.

The maximum emitter base voltage (VEBO) is 6 V, which is important for ensuring proper operation in circuits.

This transistor complies with RoHS standards, ensuring it meets environmental regulations.

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