Infineon Silicon Junction Switching Diode, Single, 30 A, 2-Pin, 1200 V, TO-220 IDP30E120XKSA1

Infineon IDP30E120XKSA1 is a high-quality silicon junction switching diode designed to handle a maximum forward current of 30 amperes and withstand a peak repetitive reverse voltage of 1200 volts. Encapsulated in a durable TO-220 package with two pins, this diode supports through-hole mounting, making it suitable for various industrial and electronic applications.

The device features fast recovery characteristics with a peak reverse recovery time of 380 nanoseconds, enabling efficient operation in power factor correction circuits, uninterruptible power supplies (UPS), welding equipment, AC-DC converters, and motor drive applications operating up to 30 kHz. It handles a maximum power dissipation of 138 watts, providing robust performance in demanding environments.

Operating reliably over a temperature range from -55°C to 150°C, the diode supports surge currents up to 102 amperes for brief periods, ensuring protection against transient power spikes. The low forward voltage of 2.15 volts contributes to efficient power usage and reduces energy losses during conduction.

The compact size of 15.95 mm height, 10.2 mm length, and 4.5 mm width makes it ideal for space-constrained boards while maintaining excellent EMI characteristics for stable electrical performance. It applies emitter controlled rapid switching technology, recognized for low conduction losses and easy paralleling capability.

Single diode configuration designed for efficient switching applications. Maximum power dissipation of 138 watts for high performance. Fast switching times with 380 nanoseconds peak reverse recovery time. Operates across a wide temperature range from -55°C to 150°C.

Peak non-repetitive forward surge current capability of 102 A. Compact dimensions: 15.95 mm height, 10.2 mm length, and 4.5 mm width. Robust through-hole mount for reliable installation. Ultra-soft diode technology suitable for motor drives up to 30 kHz.

Low forward voltage of 2.15 V promoting energy efficiency. Good EMI behavior and low conduction losses for stable operation.

This diode is ideal for industrial, telecommunications, and power electronics applications requiring rapid switching diodes with high reliability and efficiency. It complies with JEDEC standards for semiconductor devices but does not have specific automotive approvals.

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