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ROHM Type P-Channel MOSFET 1.5 A 30 V Enhancement Surface Mount 3-Pin TUMT Package RRF015P03TL
Specifications
| Country of Origin | Thailand |
|---|---|
| Brand | ROHM |
| Height | 0.82mm |
| Length | 2.1mm |
| Model | RRF015P03TL |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RRF015P03 |
| Maximum Operating Temperature | 150°C |
| Package Type | TUMT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 230mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 800mW |
| Typical Gate Charge Qg @ Vgs | 6.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET features enhancement mode operation for efficient switching.
- The device comes in a compact TUMT package measuring 2.1mm length, 1.8mm width, and 0.82mm height.
- It supports a maximum power dissipation of 800mW and operates in temperatures from -55°C to 150°C.
- The maximum drain-source resistance is 230 milliohms, enabling low conduction losses.
- The MOSFET has a typical gate charge of 6.4nC at Vgs and a maximum gate-source voltage of -20V to +20V.
- The forward voltage is -1.2V, suitable for power management applications.
Product Description
ROHM RRF015P03TL Type P-Channel MOSFET is a highly reliable semiconductor designed for surface mount applications. It supports a maximum continuous drain current of 1.5 A and a maximum drain-source voltage of 30 V, making it ideal for power switching and amplification tasks in compact electronic circuits.
Its enhancement mode channel operation ensures efficient switching control, while the low drain-source resistance of 230 milliohms minimizes power losses effectively during conduction. The device's maximum power dissipation of 800mW and wide operation temperature range from -55°C to 150°C provide robustness for various industrial and commercial electronics.
The transistor package TUMT with 3 pins has precise dimensions: length of 2.1 mm, width of 1.8 mm, and height of 0.82 mm, suitable for dense PCB layouts requiring surface mount components.
This MOSFET supports a typical gate charge of 6.4nC at Vgs, and gate-source voltage tolerance from -20V to +20V, ensuring compatibility with common gate drive levels. The forward voltage of -1.2V supports stable device operation in circuits.
Enhancement mode P-channel MOSFET for high efficiency switching. Maximum drain current: 1.5 A, maximum voltage: 30 V. Low drain-source resistance of 230 mΩ reduces conduction losses. Compact 3-pin TUMT surface mount package.
Suitable for applications requiring operation from -55°C to 150°C. Maximum power dissipation rating of 800mW ensures durability. Typical gate charge at Vgs of 6.4 nC for fast switching. Forward voltage of -1.2 V supports power efficiency.
This product is manufactured in Thailand under ROHM Semiconductor standards, ensuring high quality and consistency for professional electronics design.
Common applications include power management in telecommunications, battery protection, industrial control systems, consumer electronics, and automotive electronics (non-automotive standard certified).
Explore more ROHM semiconductor components and related electronic parts in EnvMart’s extensive Electronics & Electricals category for your industrial and development needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.5 A.
This MOSFET supports a maximum drain-source voltage of 30 V.
It comes in a TUMT package with dimensions of 2.1 mm in length, 1.8 mm in width, and 0.82 mm in height.
The maximum power dissipation rating for this model is 800 mW.
The typical gate charge at Vgs for this MOSFET is 6.4 nC.
It has a maximum gate-source voltage tolerance of -20V to +20V.
The forward voltage for this model is -1.2 V.
This MOSFET operates within a temperature range of -55°C to 150°C.
The maximum drain-source resistance for this model is 230 milliohms.
This model features a 3-pin configuration.
It utilizes an enhancement mode P-channel design.
This product is manufactured in Thailand.
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