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onsemi Infrared Photodiode 65° Angle of Half Sensitivity Through Hole T-1 3/4 Package QSD2030F
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 6.1mm |
| Brand | onsemi |
| Height | 8.77mm |
| Length | 4.95mm |
| Wavelength | 880nm |
| Model | QSD2030F |
| Packaging | Tape & Reel |
| Width | 6mm |
| Mount Type | Through Hole |
| Series | QSD |
| Maximum Operating Temperature | 85°C |
| Package Type | T-1 3/4 |
| Minimum Operating Temperature | -25°C |
| Polarity | Forward |
| Dark Current | 0.5nA |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 5ns |
| Wavelength of Peak Sensitivity | 880nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 50V |
| Minimum Wavelength Detected | 700nm |
| Maximum Wavelength Detected | 1100nm |
| Angle of Half Sensitivity | 65 ° |
| Sensitive area dimensions | 1.245 x 1.245 mm |
| Wide reception angle | 40° |
Key Features
- This photodiode operates optimally with a wavelength peak sensitivity of 880nm.
- The device features a black epoxy package with a daylight filter to block ambient visible light.
- It is designed with a wide reception angle of 40° for efficient infrared detection.
- The QSD2030F photodiode supports operating temperatures from -25°C to 85°C.
- The photodiode contains 2 pins and mounts through hole.
- Its sensitive area measures 1.245 x 1.245 mm, offering precise infrared response.
- Typical rise and fall times are 5ns, enabling fast signal detection.
- It has a breakdown voltage rating of 50V and a dark current of 0.5nA for low noise operation.
Product Description
onsemi QSD2030F Infrared Photodiode is a high-performance PIN photodiode in a standard 5mm (T-1 3/4) through hole black epoxy package. It includes a daylight filter to effectively block ambient visible light, enhancing infrared detection accuracy.
This photodiode exhibits a wavelength peak sensitivity of 880nm with detection capability over a range of 700nm to 1100nm. It features a wide reception angle of 40° and an angle of half sensitivity of 65°, supporting broad-area infrared sensing.
The QSD2030F is designed for operation across a temperature range of -25°C to 85°C, making it suitable for various industrial and electronic applications. Its fast response times (5ns rise and fall) enable rapid signal processing in optical systems.
This device has a breakdown voltage rating of 50V and a low dark current of 0.5nA, ensuring reliable and low-noise performance. The photodiode is provided with 2 pins and is intended for through hole mounting, packaged in tape & reel format to facilitate manufacturing efficiency.
Suitable for industrial, laboratory, electronics manufacturing, and instrumentation applications, the QSD2030F is compliant with RoHS environmental guidelines. High sensitivity infrared photodiode with daylight filter. Wide reception angle and fast rise/fall times.
Robust through hole T-1 3/4 package. Temperature tolerant from -25°C to 85°C. Low dark current and high breakdown voltage. Explore more onsemi Photodiode products and electronic components at EnvMart for your industrial and electronic design requirements.
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Frequently Asked Questions
The QSD2030F photodiode has a peak sensitivity wavelength of 880nm.
This model operates within a temperature range of -25°C to 85°C.
The angle of half sensitivity for this photodiode is 65°.
The sensitive area of the QSD2030F measures 1.245 x 1.245 mm.
The breakdown voltage rating for the QSD2030F is 50V.
This photodiode has a dark current of 0.5nA.
It comes in a T-1 3/4 through hole black epoxy package.
The typical rise and fall times for the QSD2030F are both 5ns.
This photodiode features a wide reception angle of 40°.
The QSD2030F is designed with 2 pins for mounting.
The QSD2030F is compliant with RoHS environmental guidelines.
It can detect wavelengths from 700nm to 1100nm.
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