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Taiwan Semiconductor 1-Element Bi-Directional TVS Diode 600 W, Surface Mount, DO-214 Package SMBJ51CA
Specifications
| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.45mm |
| Length | 4.75mm |
| Model | SMBJ51CA |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | SMBJ |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | FBI |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 82.4V |
| Diode Configuration | Single |
| Direction Type | Bi-Directional |
| Minimum Breakdown Voltage Vbr | 56.7V |
| Maximum Reverse Stand-off Voltage Vwm | 51V |
| Peak Pulse Power Dissipation Pppm | 600W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 7.3A |
| Maximum Reverse Leakage Current | 5μA |
Key Features
- This device provides excellent clamping capability for transient voltage suppression.
- It features a single diode element with bi-directional voltage protection.
- The diode has a minimum breakdown voltage of 56.7 V and a maximum stand-off voltage of 51 V.
- It operates effectively within a temperature range from -55°C to 150°C.
- The package dimensions are 4.75 mm length, 3.95 mm width, and 2.45 mm height.
- The diode supports a maximum peak pulse current of 7.3 A and a clamping voltage of 82.4 V.
- It is mounted as a surface mount device making it suitable for compact electronic designs.
- The product complies with FBI standards and features glass-passivated junction technology.
Product Description
Taiwan Semiconductor SMBJ51CA is a 1-Element Bi-Directional Transient Voltage Suppressor (TVS) diode designed for surface mount installation with a DO-214 package. It provides robust protection against voltage transients and surges with a peak pulse power dissipation rating of 600 W.
The device features a glass-passivated junction, delivering fast response time and low incremental surge resistance, ensuring high reliability during voltage spikes. It has a minimum breakdown voltage of 56.7 V and a maximum reverse stand-off voltage of 51 V, making it suitable for protecting sensitive electronic components in industrial and electronic applications.
Operating over a wide temperature range from -55°C to +150°C, the SMBJ51CA diode ensures durability in harsh environments. Its compact package measures 4.75 mm in length, 3.95 mm in width, and 2.45 mm in height, facilitating integration into space-constrained circuits.
Provides transient voltage suppression with 600 W peak pulse power dissipation. Bi-directional diode configuration suited for AC and DC voltage protection. Fast response time with low incremental surge resistance. Glass-passivated junction enhances reliability and longevity.
Surface mount DO-214 package enables streamlined PCB mounting. Wide operating temperature range from -55°C to +150°C for industrial use. Peak pulse current capability of 7.3 A and clamping voltage of 82.4 V. Complies with FBI standards for semiconductor devices.
This TVS diode is ideal for transient voltage suppression in electronic circuits across industrial automation, power supply protection, and general electronics manufacturing applications. It safeguards circuits from damaging voltage spikes, enhancing component longevity and system reliability.
Explore the full range of Semiconductor TVS Diodes at EnvMart for optimized circuit protection solutions.
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Frequently Asked Questions
The SMBJ51CA TVS diode has a peak pulse power dissipation rating of 600 W.
The minimum breakdown voltage of this model is 56.7 V.
The maximum reverse stand-off voltage for this diode is 51 V.
The clamping voltage of the SMBJ51CA is 82.4 V.
This model can handle a maximum peak pulse current of 7.3 A.
The dimensions of this diode are 4.75 mm in length, 3.95 mm in width, and 2.45 mm in height.
The operating temperature range for the SMBJ51CA is from -55°C to +150°C.
This diode is packaged in a DO-214 package, suitable for surface mount installation.
The SMBJ51CA features a single diode element with a bi-directional configuration.
The SMBJ51CA complies with FBI standards for semiconductor devices.
The maximum reverse leakage current for the SMBJ51CA is 5 μA.
The test current for the SMBJ51CA is 1 mA.
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