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Taiwan Semiconductor 1-Element Uni-Directional TVS Diode 600 W, 2-Pin DO-214 SMBJ30A
Specifications
| Country of Origin | China |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.237mm |
| Length | 4.57mm |
| Model | SMBJ30A |
| Width | 3.94mm |
| Mount Type | Surface |
| Series | SMBJ |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 48.4V |
| Diode Configuration | Single |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 33.3V |
| Maximum Reverse Stand-off Voltage Vwm | 30V |
| Peak Pulse Power Dissipation Pppm | 600W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 12.4A |
| Maximum Reverse Leakage Current | 5μA |
Key Features
- Uni-directional diode configuration for effective over-voltage protection.
- Surface mount package type DO-214 with 2-pin design.
- 600 W peak pulse power dissipation capability.
- Minimum breakdown voltage of 33.3 V and clamping voltage of 48.4 V for reliable suppression.
- Operates reliably between -55°C and 150°C temperature range.
- Maximum peak pulse current rating of 12.4 A supports high surge conditions.
- Glass-passivated junction provides excellent reliability and fast response.
- Low maximum reverse leakage current of 5 μA for energy efficiency.
Product Description
Taiwan Semiconductor SMBJ30A 1-Element Uni-Directional TVS Diode delivers 600 W peak pulse power dissipation in a compact DO-214 surface mount package with 2 pins. This device provides robust transient voltage suppression to protect sensitive electronic circuits from voltage spikes and surges. The uni-directional diode configuration effectively clamps surge voltages while maintaining fast response times and low incremental surge resistance.
Featuring a minimum breakdown voltage (Vbr) of 33.3 V and a maximum reverse stand-off voltage (Vwm) of 30 V, the SMBJ30A accurately limits voltage disturbances to a clamping voltage (Vc) of 48.4 V, maintaining circuit integrity under harsh transient conditions.
The diode's durable design supports operation over a wide temperature range from -55°C to 150°C, suitable for harsh industrial, automotive, and commercial electronics applications. The device withstands a maximum peak pulse current (Ippm) of 12.4 A, enhancing its capability to absorb energy spikes without damage.
With physical dimensions of 4.57 mm length, 3.94 mm width, and 2.237 mm height, the SMBJ30A is suitable for dense printed circuit board (PCB) layouts in industrial, manufacturing, communication equipment, and power management contexts. The glass-passivated junction ensures product reliability and longevity while maintaining low leakage current of 5 μA.
This new, surface mount technology (SMT) TVS diode is manufactured in China by Taiwan Semiconductor and does not include automotive certification or other approvals. It is ideal for transient voltage protection in electronic devices, ensuring operational continuity and reducing downtime caused by voltage anomalies.
Uni-directional diode configuration for effective over-voltage protection. Surface mount DO-214 package with 2 pins for compact PCB applications. 600 W peak pulse power dissipation capability. Minimum breakdown voltage of 33.3 V and clamping voltage of 48.4 V for reliable suppression.
Operates across wide temperature range from -55°C to 150°C. Maximum peak pulse current rating of 12.4 A for high surge handling. Stable glass-passivated junction construction for longevity. Low maximum reverse leakage current of 5 μA.
Manufactured in China with new product condition. Explore more semiconductors and TVS Diode components on EnvMart to ensure the best protection for your electronic and industrial systems.
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Frequently Asked Questions
The SMBJ30A has a peak pulse power dissipation capability of 600 W.
The minimum breakdown voltage (Vbr) for the SMBJ30A is 33.3 V.
The clamping voltage (Vc) of this model is 48.4 V.
The maximum reverse stand-off voltage (Vwm) for the SMBJ30A is 30 V.
This model operates reliably between -55°C and 150°C.
The maximum peak pulse current rating (Ippm) for this diode is 12.4 A.
The dimensions of the SMBJ30A are 4.57 mm in length, 3.94 mm in width, and 2.237 mm in height.
The SMBJ30A uses a surface mount package type DO-214 with a 2-pin design.
The maximum reverse leakage current for this diode is 5 μA.
The SMBJ30A features a uni-directional diode configuration.
This model is suitable for transient voltage protection in electronic devices, including industrial, automotive, and commercial electronics applications.
The SMBJ30A is manufactured in China.
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