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Nexperia Small Signal NPN Bipolar Transistor, 600 mA, 40 V, Surface Mount, 3-Pin UMT Package PMST2222A,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model PMST2222A,115
Width 2.2mm
Mount Type Surface
Series PMST2222A
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz
onsemi MMBT2222AWT1G Transistor, 600 mA NPN, 40 V, 3-Pin SC-70Brand onsemi

Key Features

  • This transistor supports a maximum DC collector current of 600 mA.
  • It can withstand a maximum collector-emitter voltage of 40 V.
  • Featuring a 3-pin UMT package suitable for surface mounting.
  • Has a maximum power dissipation rating of 200 mW for reliable operation.
  • Operates across a temperature range from -65°C to 150°C.
  • Minimum DC current gain (hFE) is 35, ensuring adequate amplification.
  • Maximum transition frequency is 300 MHz, suitable for high-frequency applications.
  • Compact dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height.

Product Description

Nexperia PMST2222A,115 small signal NPN bipolar transistor offers robust electrical characteristics ideal for a range of electronic applications. This transistor is designed with a maximum DC collector current of 600 mA and a collector-emitter voltage rating of 40 V, making it suitable for switching and amplification tasks in compact circuits.

The device comes in a surface mountable UMT package with three pins, allowing for efficient PCB layout in automated assembly processes. Its compact form factor measures 2.2 mm by 2.2 mm with a height of 1.1 mm, facilitating integration into space-constrained designs.

Operating over a wide temperature range from -65°C to 150°C, the transistor is suitable for demanding industrial and commercial environments. It features a minimum DC current gain (hFE) of 35 and a maximum transition frequency of 300 MHz, supporting high-frequency signal processing.

With a maximum power dissipation of 200 mW, this transistor maintains performance stability under typical operating conditions. RoHS compliance assures environmentally safe manufacturing practices.

This transistor is commonly used in industrial electronics, communication equipment, and consumer electronic devices where low power, high gain transistors are required for switching and signal amplification.

This transistor supports a maximum DC collector current of 600 mA. It can withstand a maximum collector-emitter voltage of 40 V. Featuring a 3-pin UMT package suitable for surface mounting. Has a maximum power dissipation rating of 200 mW for reliable operation.

Operates across a temperature range from -65°C to 150°C. Minimum DC current gain (hFE) is 35, ensuring adequate amplification. Maximum transition frequency is 300 MHz, suitable for high-frequency applications. Compact dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height.

Compliant with RoHS standards, ensuring environmental safety. Designed for general-purpose small signal amplification in electronic circuits. Explore a broad range of semiconductor components and Bipolar Transistors available for your electronic design and manufacturing needs at EnvMart.

Nexperia Small Signal NPN Bipolar Transistor, 600 mA, 40 V, Surface Mount, 3-Pin UMT Package PMST2222A,115
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Frequently Asked Questions

The maximum DC collector current for this transistor is 600 mA.

It can withstand a maximum collector-emitter voltage of 40 V.

This model has compact dimensions of 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

The maximum power dissipation rating is 200 mW.

It operates across a temperature range from -65°C to 150°C.

The minimum DC current gain (hFE) is 35.

The maximum transition frequency is 300 MHz, making it suitable for high-frequency applications.

It features a 3-pin UMT package suitable for surface mounting.

Yes, this transistor is compliant with RoHS standards, ensuring environmentally safe manufacturing practices.

The maximum emitter-base voltage (VEBO) is 6 V.

The transistor configuration is single NPN.

It is commonly used in industrial electronics, communication equipment, and consumer electronic devices for switching and signal amplification.

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