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Nexperia Small Signal NPN Transistor 100 mA 45 V 3-Pin UMT Surface Mount BC850CW,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BC850CW,115
Width 1.35mm
Mount Type Surface
Series BC850W
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 420
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC847CWT1G Transistor, 100 mA NPN, 45 V, 3-Pin SOT-323Brand onsemi

Key Features

  • Supports a maximum power dissipation of 200 mW for reliable operation.
  • Has a minimum DC current gain (hFE) of 420 ensuring efficient amplification.
  • Features a maximum transition frequency (ft) of 100 MHz suitable for high frequency applications.
  • Operates within a temperature range of -65°C to 150°C, ensuring stability under varied conditions.
  • Complies with RoHS standards and meets automotive standard AEC-Q101 for quality assurance.
  • Compact dimensions include length 2.2 mm, width 1.35 mm, and height 1.1 mm for space-saving PCB designs.
  • Maximum collector base voltage and emitter base voltage are 50 V and 5 V respectively for robust performance.

Product Description

Nexperia BC850CW,115 is a new small signal NPN transistor designed for surface mounting with a compact 3-pin UMT package. It supports a maximum DC collector current of 100 mA and collector emitter voltage up to 45 V, making it suitable for various electronic circuit applications requiring reliable switching and amplification.

This bipolar transistor features a high minimum DC current gain of 420, enabling efficient signal amplification with low distortion. Its maximum power dissipation rating of 200 mW ensures stable and safe operation under typical conditions, while the maximum transition frequency of 100 MHz allows use in high-frequency circuits.

Operating temperature ranges from -65°C to 150°C, making this transistor reliable in harsh automotive and industrial environments. The device complies with RoHS standards and conforms to AEC-Q101 automotive quality standards, ensuring extended reliability and performance consistency.

The transistor's compact footprint, with dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height, is ideal for dense PCB layouts requiring space efficiency. The maximum collector base voltage of 50 V and emitter base voltage of 5 V provide versatility for a variety of circuit configurations.

This transistor suits industrial, automotive, communication, and consumer electronics applications where compact size and reliable signal processing are essential. Its surface mount package facilitates automated assembly and manufacturing efficiency.

Supports a maximum power dissipation of 200 mW for reliable operation. Has a minimum DC current gain (hFE) of 420 ensuring efficient amplification. Features a maximum transition frequency (ft) of 100 MHz suitable for high frequency applications.

Operates within a temperature range of -65°C to 150°C, ensuring stability under varied conditions. Complies with RoHS standards and meets automotive standard AEC-Q101 for quality assurance. Compact dimensions include length 2.2 mm, width 1.35 mm, and height 1.1 mm for space-saving PCB designs.

Maximum collector base voltage and emitter base voltage are 50 V and 5 V respectively for robust performance. Explore the wide selection of Bipolar Transistors including this model at EnvMart for your industrial and electronic component needs.

Nexperia Small Signal NPN Transistor 100 mA 45 V 3-Pin UMT Surface Mount BC850CW,115
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Frequently Asked Questions

The maximum power dissipation of this model is 200 mW, ensuring reliable operation under typical conditions.

This transistor has a minimum DC current gain (hFE) of 420, which facilitates efficient signal amplification.

The maximum transition frequency (ft) of this transistor is 100 MHz, making it suitable for high-frequency applications.

The compact dimensions of this transistor are 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height.

It operates within a temperature range of -65°C to 150°C, ensuring stability in various conditions.

The maximum collector emitter voltage (Vceo) is 45 V, providing robust performance in circuit applications.

The maximum collector base voltage (VCBO) is 50 V, allowing versatility in circuit configurations.

This transistor uses a 3-pin UMT surface mount package, which facilitates automated assembly.

It complies with the AEC-Q101 automotive standard, ensuring quality assurance for automotive applications.

Yes, it complies with RoHS standards, indicating its adherence to environmental regulations.

The maximum DC collector current for this model is 100 mA, suitable for various electronic circuit applications.

This model is a small signal NPN bipolar transistor, designed for reliable switching and amplification in electronic circuits.

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