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Nexperia Darlington Transistor NPN 1A 80V HFE 1000, 4-Pin SOT-223 BSP52,115

Category Darlington Transistor Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.7mm
Length 6.7mm
Model BSP52,115
Mount Type Surface
Series BSP52
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Continuous Collector Current Ic 1A
Maximum Collector Emitter Voltage Vceo 80V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 1000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 1.3V
Maximum Collector Base Voltage VCBO 90V
Maximum Collector Cut-off Current 0.00005mA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.25W
onsemi 1 Darlington Transistor NPN, 1 A 80 V HFE 1000, 4-Pin SOT-223Brand: onsemi
Nexperia 1 Darlington Transistor NPN, 1 A 80 V HFE 1000, 4-Pin SOT-223

Key Features

  • Supports a minimum DC current gain (hFE) of 1000.
  • Available in a 4-pin SOT-223 surface mount package.
  • Maximum emitter-base voltage is 5V, ensuring stable operation.
  • Designed for operation in temperatures from -65°C to 150°C.
  • Maximum power dissipation of 1.25W allows for efficient thermal management.
  • Transistor polarity is NPN, suitable for common switching applications.
  • Features a maximum collector base voltage of 90V and maximum collector-emitter saturation voltage of 1.3V.
  • Compact dimensions of 6.7mm length and 1.7mm height enable space-saving PCB layout.

Product Description

Nexperia BSP52,115 Darlington Transistor NPN offers robust performance for electronic applications requiring high gain and switching capabilities. It supports a maximum continuous collector current of 1A and a maximum collector-emitter voltage of 80V, making it suitable for many power amplification tasks.

This transistor has a minimum DC current gain (hFE) of 1000, providing high amplification efficiency. Housed in a 4-pin SOT-223 surface mount package, it ensures easy integration into modern PCB designs with compact footprints.

The device operates stably within a broad temperature range from -65°C to 150°C, suitable for industrial, automotive, and consumer electronics. The maximum power dissipation rating of 1.25W supports prolonged use without overheating when appropriately heat-sinked.

Additional features include maximum emitter-base voltage of 5V, maximum collector-base voltage of 90V, and maximum collector-emitter saturation voltage of 1.3V, all contributing to reliable transistor switching and amplification operations.

With dimensions of 6.7mm length and 1.7mm height, this device suits space-constrained design environments. The transistor meets the rigorous AEC-Q101 automotive standard, assuring its reliability in automotive electronic circuits.

Supports minimum DC current gain (hFE) of 1000. 4-pin SOT-223 surface mount package. Maximum continuous collector current of 1A. Broad operating temperature from -65°C to 150°C. Maximum power dissipation of 1.25W. Compliant with AEC-Q101 automotive standard.

Compact physical size for efficient PCB layout. Suitable for industrial, automotive, and consumer electronic applications.

Originating from China, the Nexperia BSP52,115 Darlington Transistor is a reliable component choice for power electronics and amplification projects. This product fits within the Electronics & Electricals > Semiconductor > Darlington Transistor category on EnvMart, making it easy to find for design and procurement professionals.

Explore more high-quality semiconductor components and accessories in EnvMart for your industrial and commercial electronic needs.

Nexperia Darlington Transistor NPN 1A 80V HFE 1000, 4-Pin SOT-223 BSP52,115
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Frequently Asked Questions

The maximum continuous collector current for this model is 1A.

This transistor operates within a temperature range of -65°C to 150°C.

The minimum DC current gain (hFE) is 1000, providing high amplification efficiency.

It is housed in a 4-pin SOT-223 surface mount package, suitable for compact PCB designs.

The maximum collector-emitter voltage (Vceo) is 80V.

The maximum power dissipation is rated at 1.25W, allowing for efficient thermal management.

The maximum collector-base voltage (VCBO) is 90V.

The transistor has a height of 1.7mm and a length of 6.7mm.

It complies with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

The maximum emitter-base voltage (VEBO) is 5V.

This model is an NPN Darlington transistor, suitable for common switching applications.

This transistor features a 4-pin configuration.

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