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onsemi High-Power 20 A NPN Bipolar Transistor, 140 V, 2-Pin TO-204 Package MJ15003G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin Mexico
Brand onsemi
Height 20.7mm
Length 39.37mm
Model MJ15003G
Width 26.7mm
Mount Type Through Hole
Series MJ15003
Maximum Operating Temperature 200°C
Package Type TO-204
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Collector Emitter Voltage Vceo 140V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 140V
Maximum Power Dissipation Pd 250W
Maximum DC Collector Current Idc 20A
Transistor Configuration Single
Maximum Transition Frequency ft 2MHz
onsemi 2N3773G Transistor, 16 A NPN, 140 V, 3-Pin TO-204Brand onsemi

Key Features

  • The transistor supports a maximum collector emitter voltage of 140 V.
  • It features a high maximum power dissipation of 250 W for robust operation.
  • The device operates over a wide temperature range from -65°C to 200°C.
  • Designed for low distortion complementary circuits with a minimum DC current gain of 25.
  • The package type is TO-204 with a sturdy 2-pin metal case for enhanced heat dissipation.
  • The maximum transition frequency is 2 MHz, suitable for audio and linear amplifier applications.
  • Maximum collector base voltage rating is also 140 V, allowing stable operation in high-voltage scenarios.
  • Its NPN polarity supports a variety of power amplification circuits.

Product Description

onsemi MJ15003G is a high-power NPN bipolar transistor designed to deliver excellent performance in audio amplification, disk head positioning, and other linear applications. Encapsulated in a durable TO-204-2 metal case, this transistor supports a continuous collector current of up to 20 A and withstands a collector emitter voltage of 140 V.

This device features a maximum power dissipation rating of 250 W, ensuring robust and reliable operation under demanding conditions. The transistor exhibits a minimum DC current gain (hFE) of 25 and a maximum transition frequency (ft) of 2 MHz, making it ideal for low distortion audio power amplifier designs.

Operating temperature ranges from -65°C to 200°C, providing broad environmental resilience suitable for industrial and commercial electronics. The two-pin TO-204 package facilitates efficient heat management and through-hole mounting compatibility in various PCB layouts.

Additional specifications include a maximum collector base voltage and emitter base voltage of 140 V and 5 V respectively, supporting stable transistor operation. The pin count of 2 supports straightforward integration in power circuits requiring NPN transistor configurations.

The transistor supports a maximum collector emitter voltage of 140 V. Maximum continuous collector current is 20 A for high power applications. Power dissipation up to 250 W ensures durability under thermal stress. Low distortion complementary design suitable for audio applications.

Temperature operating range from -65°C to 200°C enables use in harsh environments. Minimum DC current gain of 25 to maintain amplification efficiency. TO-204 metal case enhances heat dissipation and mechanical durability.

Maximum transition frequency of 2 MHz for effective power signal handling. Pin count of 2 supports easy through-hole PCB mounting.

The MJ15003G transistor is manufactured in Mexico and is a reliable component for industrial and laboratory power electronic systems. Its specification and design make it highly suitable for use in high-power audio amplifiers, disk head positioning systems, and other linear electronic circuits where performance and reliability are critical.

Explore more on high-power Bipolar Transistors with onsemi products in the Electronics & Electricals category on EnvMart for industrial and commercial applications.

onsemi High-Power 20 A NPN Bipolar Transistor, 140 V, 2-Pin TO-204 Package MJ15003G
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Frequently Asked Questions

The maximum collector emitter voltage for this transistor is 140 V.

It can handle a maximum continuous collector current of 20 A.

The maximum power dissipation rating is 250 W, allowing for robust operation under demanding conditions.

The operating temperature range for this model is from -65°C to 200°C.

The maximum transition frequency is 2 MHz, making it suitable for audio and linear amplifier applications.

This transistor is packaged in a TO-204 metal case, which supports through-hole mounting.

The minimum DC current gain (hFE) for the MJ15003G is 25.

The maximum emitter base voltage (VEBO) is 5 V.

The dimensions are 39.37 mm in length, 26.7 mm in width, and 20.7 mm in height.

It has a single transistor configuration with NPN polarity.

This transistor is manufactured in Mexico.

It is suitable for audio amplification, disk head positioning, and other linear electronic circuits.

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