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Nexperia Resistor-Equipped Transistor 100 mA PNP, 50 V, 3-Pin DFN1110D-3 PDTA123JQBZ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTA123JQBZ
Mount Type Surface
Series PDTA123J
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -10V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • Supports maximum collector emitter voltage of 50 V.
  • Built-in resistors reduce circuit complexity and component count.
  • Low package height of 0.5 mm supports automated optical inspection.
  • Wide operating temperature range from -55°C to 150°C for robust industrial performance.
  • Suitable for controlling IC inputs and switching loads in digital applications.
  • Compliance with RoHS and automotive standard AEC-Q101 ensures reliability.
  • 3-pin leadless surface mount reduces pick and place costs and enables high-density PCB layouts.
  • Cost-effective alternative to BC857 series transistors.

Product Description

Nexperia PDTA123JQBZ Resistor-Equipped Transistor is a PNP bipolar transistor featuring integrated resistors designed to simplify circuit designs and reduce overall component count. Packaged in an ultra-small 3-pin DFN1110D-3 leadless surface-mount device with side-wettable flanks, this transistor is ideal for advanced electronic assemblies requiring compact and reliable discrete semiconductors.

With a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V, this transistor supports switching and amplification functions in various digital applications. The built-in resistors help in minimizing external component requirements, thereby reducing manufacturing complexity and costs.

The device supports a wide operating temperature range from -55°C up to 150°C, making it suitable for demanding industrial, automotive, and commercial electronics environments. Its low package height of 0.5 mm also enables compatibility with automatic optical inspection (AOI) processes, enhancing quality assurance during manufacturing.

Conformance to RoHS and automotive standard AEC-Q101 validates the component's compliance with environmental and automotive industry requirements, respectively. This transistor is often used for controlling IC inputs, switching loads, and as a cost-effective replacement for the BC857 series in many electronic circuit designs.

Maximum DC collector current: 100 mA. Maximum collector-emitter voltage: 50 V. Emitters base voltage maximum: 10 V. Package type: 3-pin DFN1110D-3 surface mount. Operating temperature range: -55°C to 150°C. Built-in resistors reduce circuit complexity.

Low profile at 0.5 mm height supports AOI. RoHS compliant and meets AEC-Q101 automotive standard. Cost-saving alternative to BC857 series.

This Nexperia resistor-equipped transistor PDTA123JQBZ is ideal for industrial, automotive, and digital electronics applications requiring reliable transistor switching and amplification. Explore a wide range of Bipolar Transistors and semiconductor components available in the EnvMart catalog for diverse applications.

Nexperia Resistor-Equipped Transistor 100 mA PNP, 50 V, 3-Pin DFN1110D-3 PDTA123JQBZ
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Frequently Asked Questions

The maximum collector-emitter voltage for this transistor is 50 V.

This model can handle a maximum DC collector current of 100 mA.

The operating temperature range for this transistor is from -55°C to 150°C.

It is packaged in a 3-pin DFN1110D-3 surface mount package.

This transistor features built-in resistors that reduce circuit complexity and component count.

Yes, it is RoHS compliant and meets the automotive standard AEC-Q101.

The maximum emitter-base voltage for this transistor is 10 V.

The PDTA123JQBZ has a PNP transistor configuration.

This transistor is suitable for controlling IC inputs and switching loads in digital applications.

The package height for this model is 0.5 mm.

The PDTA123JQBZ is manufactured in India.

This model serves as a cost-effective alternative to the BC857 series transistors.

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