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STMicroelectronics Darlington Transistor NPN 100 mA 1200 V 3-Pin TO-220 STP03D200
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP03D200 |
| Mount Type | Through Hole |
| Series | STP03D200 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 100mA |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Number of Elements per Chip | 1 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 20V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 2000V |
| Maximum Collector Cut-off Current | 100μA |
| Maximum Power Dissipation Pd | 40W |
Key Features
- This NPN Darlington transistor supports a maximum continuous collector current of 100 mA.
- It has a maximum collector-emitter voltage rating of 1200 V, suitable for high-voltage applications.
- The package type is TO-220 with 3 pins and through-hole mount type.
- Maximum power dissipation rating is 40 W ensuring efficient thermal management.
- The device operates reliably from -65°C up to 150°C, covering wide operating temperature ranges.
- Maximum emitter-base voltage is 20 V and collector-base voltage is 2000 V.
- Maximum collector-emitter saturation voltage is 2 V, allowing low voltage drop during conduction.
- The transistor polarity is NPN with one element per chip.
Product Description
STMicroelectronics STP03D200 is a high-voltage NPN Darlington transistor designed for various electronic circuits requiring efficient switching and amplification. Rated for a continuous collector current of 100 mA and withstands voltages up to 1200 V, it fits applications involving power regulation, signal amplification, and switch-mode power supplies.
Housed in a robust TO-220 package with three pins and designed for through-hole mounting, the device allows easy integration into printed circuit boards with adequate heat dissipation capabilities. The transistor features a maximum power dissipation of 40 W, ensuring safe operation under load conditions.
Performance is sustained across a wide temperature range from -65°C to 150°C, making it suitable for industrial, automotive electronics (non-automotive grade), and general-purpose electronic devices. The NPN polarity and single element architecture provide predictable bipolar transistor behavior with a maximum collector-emitter saturation voltage of 2 V.
Additional electrical characteristics include a maximum collector-base voltage of 2000 V and maximum emitter-base voltage of 20 V. The transistor exhibits a low maximum collector cut-off current (100 μA), improving efficiency in power control circuits.
Maximum continuous collector current: 100 mA. Maximum collector-emitter voltage (Vceo): 1200 V. Package type: TO-220, through-hole mount. Maximum power dissipation: 40 W. Operating temperature range: -65°C to 150°C. Maximum emitter-base voltage: 20 V.
Maximum collector-base voltage: 2000 V. Maximum collector-emitter saturation voltage: 2 V. Pin count: 3. Dimensions: height 15.75 mm, length 10.4 mm. Country of origin: China.
This Darlington Transistor is extensively used in industrial electronic assemblies, power switching circuits, amplifier stages, and other semiconductor applications requiring reliable high-voltage switching. Compatible with through-hole design for ease of prototyping and manufacturing.
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Frequently Asked Questions
The maximum continuous collector current for this model is 100 mA.
It has a maximum collector-emitter voltage rating of 1200 V, suitable for high-voltage applications.
This transistor is housed in a TO-220 package designed for through-hole mounting.
The maximum power dissipation rating for this unit is 40 W, ensuring efficient thermal management.
It operates reliably within a temperature range of -65°C to 150°C.
The maximum collector-base voltage for this transistor is 2000 V.
The maximum emitter-base voltage is 20 V.
The maximum collector-emitter saturation voltage is 2 V, allowing for low voltage drop during conduction.
This model features a pin count of 3.
The STP03D200 is an NPN Darlington transistor, which provides predictable bipolar transistor behavior.
The country of origin for this transistor is China.
This Darlington transistor is suitable for various applications including power regulation, signal amplification, and switch-mode power supplies.
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