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STMicroelectronics STripFET Type N-Channel MOSFET 16 A 60 V Enhancement 3-Pin TO-263 STB16NF06LT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.75mm |
| Model | STB16NF06LT4 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 7.3nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1.3V |
Key Features
- Enhancement mode channel for reliable switching performance.
- Maximum power dissipation of 45 W suitable for efficient heat management.
- Low typical gate charge of 7.3 nC reduces switching losses.
- Maximum drain-source resistance of 100 mΩ for low conduction losses.
- Operates within a temperature range from -55°C to 175°C for extended durability.
- Compact TO-263 package with a height of 4.6 mm and footprint 10.75 mm length by 10.4 mm width.
- Surface mount type ensures compatibility with modern PCB manufacturing.
- Maximum gate-source voltage of ±16 V protects the device against voltage spikes.
Product Description
STMicroelectronics STB16NF06LT4 is a high-performance STripFET type N-Channel MOSFET designed for power switching and amplification applications in electronic circuits. The device supports a maximum continuous drain current of 16 A and withstands a drain-source voltage up to 60 V, making it suitable for various industrial and commercial electronics projects.
This MOSFET features an enhancement channel mode, which enables the device to switch efficiently and reliably. It dissipates up to 45 W of power, supporting thermal management in demanding environments. The typical gate charge is optimized at 7.3 nC, which facilitates faster switching and reduces overall power loss.
Packaged in a 3-pin TO-263 surface-mount package, this component occupies minimal PCB space while offering straightforward installation with surface mount technology. Its compact dimensions - length 10.75 mm, width 10.4 mm, and height 4.6 mm - make it ideal for compact electronic assemblies.
Operating temperature ranges from -55°C to 175°C ensure robustness in adverse conditions. The device has a maximum gate-source voltage rating of 16 V and a typical forward voltage of 1.3 V, supporting stable operation and protection against voltage spikes.
This MOSFET is not certified for automotive standards but is suitable for industrial automation, power management, and general-purpose switching in power electronics. It is tailored for applications in power converters, motor controls, voltage regulation, and other semiconductor uses within the electronics and electrical sectors.
Enhancement mode N-channel MOSFET with 16 A drain current capacity. Maximum drain-source voltage of 60 V for versatile power applications. Surface mount TO-263 package for easy PCB mounting and space saving. Low gate charge of 7.3 nC reduces switching energy losses.
Wide operating temperature range from -55 to 175°C ensures reliability. Maximum power dissipation of 45 W supports high load applications. Compact dimensions suit dense electronic designs. Ideal for industrial electronics, power management, and switching applications.
Explore more STMicroelectronics semiconductor components and MOSFETs at EnvMart for advanced electronic design and manufacturing solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16 A.
It has a maximum drain-source voltage rating of 60 V.
The dimensions of the TO-263 package are 10.75 mm in length, 10.4 mm in width, and 4.6 mm in height.
The typical gate charge is 7.3 nC, which helps reduce switching losses.
This MOSFET can dissipate a maximum of 45 W of power.
It operates within a temperature range from -55°C to 175°C.
This model uses a surface mount type for easy installation on PCBs.
The maximum gate-source voltage is ±16 V.
The maximum drain-source resistance is 100 mΩ, which helps minimize conduction losses.
It is suitable for applications in power converters, motor controls, and voltage regulation.
The typical forward voltage is 1.3 V.
This model belongs to the STripFET series.
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