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STMicroelectronics STripFET II Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-220 STP60NF10
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP60NF10 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 23mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 104nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current rated at 80 amps for high power handling.
- Maximum drain-source voltage of 100 volts suitable for robust applications.
- Enhanced STripFET II technology ensures low on-resistance of 23 milliohms.
- Compact TO-220 package with 3 pins designed for through-hole mounting.
- Maximum power dissipation capability of 300 watts for reliable thermal performance.
- Wide operating temperature range from -55 °C to 175 °C supports harsh environments.
- Typical gate charge of 104 nanocoulombs enables fast switching speeds.
- Maximum gate-source voltage of 20 volts maintains device safety during operation.
Product Description
STMicroelectronics STP60NF10 is a high-performance N-Channel MOSFET from the STripFET II series designed for power electronics applications requiring efficient switching and high current capability. This enhancement-mode transistor supports a maximum continuous drain current of 80 A and a drain-source voltage rating of 100 V, making it ideal for load switching, power management, and motor control in industrial and consumer electronics.
The device comes in a through-hole TO-220 package with three pins, facilitating easy mounting and heat dissipation. Its ultra-low on-resistance of 23 mΩ helps reduce conduction losses, improving overall circuit efficiency. With a maximum power dissipation of 300 W, the STP60NF10 maintains reliable thermal performance under demanding conditions.
The typical gate charge of 104 nC ensures fast switching times, suitable for high-frequency PWM and DC-DC converter designs. The MOSFET operates safely within gate-source voltages up to 20 V and withstands temperatures ranging from -55 °C to 175 °C, enabling use across a broad spectrum of environmental conditions.
Supports a maximum continuous drain current of 80 A for heavy-duty applications. Rated for 100 V maximum drain-source voltage ensuring device durability. Low on-resistance of 23 mΩ minimizes energy losses and heat generation.
Reliable TO-220 packaging with 3 pins for robust mounting and thermal management. Handles up to 300 W power dissipation for high-power circuits. Wide operational temperature range from -55 °C up to 175 °C. Typical gate charge of 104 nC promotes efficient switching performance.
Maximum gate-source voltage rating of 20 V. Forward voltage of 1.3 V drives efficient conduction. Compact physical size of 15.75 mm height, 10.4 mm length, and 4.6 mm width.
This MOSFET is suitable for diverse industrial, laboratory, and commercial applications including power supplies, motor drives, inverter circuits, and power management modules. STMicroelectronics' STripFET II technology enhances device resistance and speed, delivering reliable performance for high-efficiency power designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 80 A, making it suitable for high power handling applications.
It has a maximum drain-source voltage rating of 100 V, which ensures durability in robust applications.
The on-resistance is 23 milliohms, which helps minimize conduction losses and improves circuit efficiency.
The maximum power dissipation capability is 300 watts, allowing for reliable thermal performance under demanding conditions.
The typical gate charge is 104 nanocoulombs, which enables fast switching speeds suitable for high-frequency applications.
It operates within a wide temperature range from -55 °C to 175 °C, making it suitable for harsh environments.
This model comes in a TO-220 package, designed for through-hole mounting with three pins.
The maximum gate-source voltage is rated at 20 V, which helps maintain device safety during operation.
The dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
It is suitable for various applications including power supplies, motor drives, inverter circuits, and power management modules.
The forward voltage is 1.3 V, which contributes to efficient conduction.
This model utilizes an N-channel type, which is common for enhancement-mode transistors in power electronics.
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