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STMicroelectronics STripFET Type N-Channel MOSFET 13 A 100 V Enhancement 3-Pin TO-252 STD10NF10T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD10NF10T4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 15.3nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed as Enhancement mode type N channel for reliable switching.
- Encapsulated in a 3-pin TO-252 package suitable for surface mounting.
- Maximum drain-source resistance of 130 milliohms ensuring efficient conduction.
- Capable of dissipating up to 50 watts power with high temperature tolerance.
- Wide operating temperature range from -55°C to 175°C for robust performance.
- Typical gate charge at Vgs is 15.3 nanocoulombs for fast switching.
- Maximum gate-source voltage rating of 20 volts provides protection and reliability.
- Physical dimensions approx. 6.6 mm length, 6.2 mm width, and 2.4 mm height for compact PCB design.
Product Description
STMicroelectronics STD10NF10T4 is a high-performance N-Channel STripFET MOSFET designed for efficient power switching applications. With a maximum continuous drain current of 13 A and a maximum drain-source voltage of 100 V, it suits a wide range of industrial and consumer electronics uses.
The device employs enhancement mode operation with low maximum drain-source resistance of 130 milliohms, enhancing conduction efficiency and power savings. It is housed in a 3-pin TO-252 surface-mount package, facilitating easy integration onto printed circuit boards with compact layout requirements.
The STD10NF10T4 can dissipate up to 50 watts of power and withstand operating temperatures from -55°C to 175°C, making it reliable in demanding thermal environments. The typical gate charge of 15.3 nC at the specified gate voltage supports fast switching speeds needed in modern power management circuits.
Additional features include a maximum gate-source voltage rating of 20 V that safeguards the MOSFET gate structure and a forward voltage drop of 1.5 V that reduces power losses during conduction cycles. The physical size dimensions - length 6.6 mm, width 6.2 mm, height 2.4 mm - provide a balance between thermal performance and board space savings.
Enhancement mode N-Channel configuration enables robust power switching. Surface mount 3-pin TO-252 package supports compact designs. Low Rds(on) of 130 milliohms optimizes conduction efficiency. 50 W power dissipation suitable for industrial and consumer electronics.
Wide temperature range -55°C to 175°C ensures durability. Typical gate charge 15.3 nC promotes quick switching response. Maximum gate-source voltage of 20 V provides gate protection. Compact physical dimensions improve PCB layout and thermal management.
Forward voltage of 1.5 V minimizes conduction losses.
This MOSFET is ideal for various applications including power supplies, motor drivers, and general switching circuits in industrial, automotive, and electronic manufacturing sectors.
Explore more STMicroelectronics MOSFETs and semiconductor components at EnvMart for comprehensive power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for the STD10NF10T4 is 13 A.
This model has a maximum drain-source voltage rating of 100 V.
It can dissipate up to 50 watts of power.
The dimensions are approximately 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The typical gate charge at Vgs is 15.3 nanocoulombs.
The maximum gate-source voltage rating is 20 V.
It has a maximum drain-source resistance of 130 milliohms.
The operating temperature range is from -55°C to 175°C.
It is encapsulated in a 3-pin TO-252 package suitable for surface mounting.
This model uses an enhancement mode type N channel configuration.
The forward voltage drop is 1.5 V, which helps reduce power losses during conduction cycles.
It is suitable for various applications including power supplies, motor drivers, and general switching circuits in industrial and automotive sectors.
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