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STMicroelectronics STripFET II Type N-Channel MOSFET, 120 A, 100 V, 312 W Power Dissipation, 3-Pin TO-220 STP120NF10
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP120NF10 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 10.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 312W |
| Typical Gate Charge Qg @ Vgs | 172nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Provides ultra-low gate charge for efficient switching performance.
- Features low maximum drain-source resistance of 10.5 mΩ for reduced power loss.
- Supports a maximum power dissipation of 312 W for high-power applications.
- Operates across a wide temperature range from -55°C to 175°C.
- Enhancement mode channel type designed for fast switching circuits.
- 3-pin through-hole mounting enables easy PCB integration.
- Typical gate charge at Vgs is 172 nC to optimize gate drive requirements.
- Maximum gate source voltage rating up to 20 V for robust operation.
Product Description
STMicroelectronics STP120NF10 is a STripFET II Type N-Channel MOSFET designed for high current and voltage applications, supporting a maximum continuous drain current of 120 A and a drain-source voltage rating of 100 V in a standard 3-pin TO-220 package. It delivers an ultra-low gate charge and low on-resistance, making it ideal for power electronic circuits requiring efficient switching and thermal management.
This device has a maximum power dissipation of 312 W and operates reliably within a temperature range of -55°C to 175°C, suitable for demanding industrial, commercial, and manufacturing environments. The enhancement mode channel provides stable and fast switching characteristics essential for power conversion and motor control applications.
The MOSFET features a typical gate charge of 172 nC at a gate-source voltage of 10 V, ensuring optimized gate drive performance. Its low forward voltage and maximum drain-source resistance of 10.5 milliohm contribute to energy-efficient circuit designs.
The compact TO-220 package (length 10.4 mm, width 4.6 mm, height 9.15 mm) enables easy through-hole mounting on PCBs and excellent heat dissipation via heatsinks or thermal pads. This component is widely used in power supplies, motor drivers, DC-DC converters, and electronic control units.
Ultra-low gate charge and low on-resistance for efficient power switching. High continuous drain current up to 120 A in a compact TO-220 package. High maximum power rating of 312 W suitable for demanding applications. Wide operating temperature range from -55°C to 175°C.
Robust enhancement mode N-Channel MOSFET design. Standard 3-pin through-hole mounting configuration. Ideal for industrial, manufacturing, and commercial electronics use.
This high-performance MOSFET by STMicroelectronics offers reliable switching and power handling capabilities that meet the needs of various electronic and industrial applications. Discover more semiconductor components and power devices in the Electronics & Electricals category at EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
It supports a maximum power dissipation of 312 W, making it suitable for high-power applications.
The typical gate charge at a gate-source voltage of 10 V is 172 nC.
The maximum gate-source voltage rating for this MOSFET is 20 V.
The maximum drain-source resistance is 10.5 mΩ, contributing to reduced power loss.
It operates reliably within a temperature range from -55°C to 175°C.
This model comes in a TO-220 package with a standard 3-pin through-hole mounting configuration.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
This model uses an enhancement mode N-channel type.
It is widely used in power supplies, motor drivers, DC-DC converters, and electronic control units.
The country of origin for this MOSFET is India.
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