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ROHM Type P, Type N-Channel MOSFET HUML2020L8, 4A, 30V, Surface Mount, Low On-Resistance UT6MA2TCR
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | UT6MA2TCR |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | HUML2020L8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 4.3nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Provides both Type P and Type N channel operation for flexible circuit design.
- Maximum continuous drain current of 4 A allows high power handling.
- Rated for a maximum drain-source voltage of 30 V, suitable for various applications.
- Surface mount package HUML2020L8 ensures compact PCB integration.
- Low drain-source resistance of 70 mΩ reduces power loss and improves efficiency.
- Typical gate charge of 4.3 nC ensures fast switching performance.
- Maximum power dissipation of 2 W enables robust operation in demanding environments.
- Wide operating temperature range from -55°C to 150°C makes it suitable for harsh environments.
Product Description
ROHM UT6MA2TCR is a Type P, Type N-Channel MOSFET in the HUML2020L8 surface mount package, designed for demanding electronic applications. It supports both Type P and Type N channel configurations, offering design flexibility and reliable performance.
Provides both Type P and Type N channel operation for flexible circuit design. Maximum continuous drain current of 4 A allows high power handling. Rated for a maximum drain-source voltage of 30 V, suitable for various applications.
Surface mount package HUML2020L8 ensures compact PCB integration. Low drain-source resistance of 70 mΩ reduces power loss and improves efficiency. Typical gate charge of 4.3 nC ensures fast switching performance. Maximum power dissipation of 2 W enables robust operation in demanding environments.
Wide operating temperature range from -55°C to 150°C makes it suitable for harsh environments. 1.2 V forward voltage enhances switching reliability. RoHS compliant and halogen-free construction for eco-friendly solutions.
This MOSFET is ideal for applications in power management, switching circuits, amplifiers, and converters across industrial, consumer electronics, and automotive sectors. The compact surface mount form factor aids miniaturization of circuit boards and improves assembly efficiency. With its robust specifications and environmental compliance, this device serves as a reliable choice for industries requiring durable and efficient discrete semiconductors.
Common industrial use cases include power switching for PCBs, motor control, inverter circuits, power conversion, and signal amplification. The wide operating temperature range and strong electrical ratings make the UT6MA2TCR suitable for projects in manufacturing, laboratory equipment, and commercial electronics.
Explore more ROHM semiconductors and high-performance MOSFETs in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
It is rated for a maximum drain-source voltage of 30 V.
This MOSFET is packaged in the HUML2020L8 surface mount type.
It has a low drain-source resistance of 70 mΩ, which helps reduce power loss and improve efficiency.
The typical gate charge is 4.3 nC, ensuring fast switching performance.
The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.
It supports both Type P and Type N channel configurations, providing design flexibility.
The maximum power dissipation is 2 W, allowing robust operation in demanding applications.
It has a forward voltage of 1.2 V, which enhances switching reliability.
Yes, this model is RoHS compliant and features halogen-free construction for eco-friendly solutions.
It is suitable for applications in power management, switching circuits, amplifiers, and converters across various sectors.
The country of origin for this model is India.
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