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ROHM NPN Bipolar Power Transistor 2SCR553P5T100, 2A, 50V, SOT-89, 4-Pin
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1.6mm |
| Length | 4.7mm |
| Model | 2SCR553P5T100 |
| Width | 2.7mm |
| Mount Type | Surface |
| Series | 2SCR553P5 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 180 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 50V |
| Maximum Power Dissipation Pd | 500mW |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Common Emitter |
| Maximum Transition Frequency ft | 100MHz |
Key Features
- NPN power transistor suitable for general purpose switching and amplification.
- Compact SOT-89 surface mount package with 4-pin configuration.
- High collector-emitter voltage rating of 50V for robust operation.
- Allows maximum collector current up to 2A for driving moderate loads.
- Minimum DC current gain of 180 ensures good amplification performance.
- Power dissipation capacity up to 500mW for reliable use.
- Maximum transition frequency of 100MHz for high-speed switching applications.
- Operating temperature range extends to 150°C for durability.
Product Description
ROHM 2SCR553P5T100 NPN Bipolar Power Transistor is a compact and efficient surface-mount component designed for reliable general purpose amplification and switching tasks. With a maximum collector current of 2A and collector-emitter voltage rating of 50V, it supports moderate power requirements while ensuring robust operation in a variety of electronic circuit designs.
The transistor is housed in a SOT-89 package with a four-pin configuration, facilitating easy insertion and integration onto PCBs. Its power dissipation limit of 500mW and high transition frequency of 100MHz make it suitable for fast-switching applications within industrial, consumer electronics, and communication systems.
Featuring a minimum DC current gain (hFE) of 180, the device offers strong amplification characteristics, ideal for signal processing and load driving tasks. The common emitter configuration simplifies circuit layout and stability, while its maximum emitter-base voltage of 6V and collector-base voltage of 50V ensure operational safety and versatility.
NPN power transistor suitable for general purpose switching and amplification. Compact SOT-89 surface mount package with 4-pin configuration. High collector-emitter voltage rating of 50V for robust operation. Allows maximum collector current up to 2A for driving moderate loads.
Minimum DC current gain of 180 ensures good amplification performance. Power dissipation capacity up to 500mW for reliable use. Maximum transition frequency of 100MHz for high-speed switching applications. Operating temperature range extends to 150°C for durability.
Common emitter configuration simplifies circuit design integration.
Industrial and commercial applications include signal amplification, switching circuits, motor control modules, and power supply systems. It is commonly used in manufacturing, laboratory electronics, and embedded system designs.
Explore more Bipolar Transistor solutions and ROHM semiconductor products in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum collector current for this transistor is 2A, allowing it to drive moderate loads effectively.
The collector-emitter voltage rating is 50V, which supports robust operation in various applications.
This model has a power dissipation capacity of up to 500mW, ensuring reliable use in electronic circuits.
The maximum transition frequency of the 2SCR553P5T100 is 100MHz, making it suitable for high-speed switching applications.
It is housed in a SOT-89 package type, which is a compact surface-mount design with a 4-pin configuration.
The minimum DC current gain (hFE) for the 2SCR553P5T100 is 180, providing good amplification performance.
The operating temperature range extends up to 150°C, allowing for durability in various environments.
This model utilizes a common emitter configuration, simplifying circuit layout and stability.
The dimensions of this transistor are 1.6mm in height, 4.7mm in length, and 2.7mm in width.
The maximum emitter-base voltage (VEBO) for the 2SCR553P5T100 is 6V, ensuring operational safety.
This transistor is suitable for general purpose switching, amplification, motor control modules, and power supply systems.
The maximum collector-base voltage (VCBO) is 50V, which supports its use in various electronic circuit designs.
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