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Nexperia Schottky Diode 40V 200mA 2-Pin Surface Mount I-IGIA 1PS79SB30,115

Category Schottky Diode Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 0.65mm
Length 1.25mm
Model 1PS79SB30,115
Width 0.85mm
Mount Type Surface
Series 1PS79SB30
Maximum Operating Temperature 150°C
Package Type I-IGIA
Minimum Operating Temperature -65°C
Pin Count 2
Automotive Standard AEC-Q101
Maximum Continuous Forward Current If 200mA
Peak Reverse Repetitive Voltage Vrrm 40V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 500nA
Peak Non-Repetitive Forward Surge Current Ifsm 1A
Maximum Forward Voltage Vf 320mV
onsemi 40 V 250 mA Diode Schottky 2-Pin SOD-523Brand onsemi

Key Features

  • Schottky barrier rectifier diode with low forward voltage drop delivers efficient switching and rectification.
  • Compact I-IGIA surface-mount package is optimized for integration into high-density PCB designs.
  • Maximum continuous forward current rated at 200mA suitable for small-signal applications.
  • Peak reverse repetitive voltage of 40V ensures reliable protection in electronic circuits.
  • Ultra-small dimensions of 1.25mm x 0.85mm x 0.65mm help reduce layout footprint.
  • AEC-Q101 automotive qualification supports use in automotive and industrial electronics.
  • Operating temperature range from -65°C to 150°C maximizes versatility across environments.

Product Description

Nexperia 1PS79SB30,115 is a high-efficiency Schottky diode designed for surface-mount integration in modern electronic circuits. With a compact I-IGIA 2-pin package, this diode offers exceptional performance for applications requiring low forward voltage drop and fast switching.

The device supports a maximum continuous forward current of 200mA and a peak repetitive reverse voltage of 40V, making it suitable for small-signal rectification, protection, and power management tasks in consumer, automotive, and industrial electronic designs. Its low leakage current and negligible power switching losses allow for improved efficiency in DC-DC converters, protection circuits, and signal clamping.

Ultra-small dimensions of 1.25mm length, 0.85mm width, and 0.65mm height allow designers to create compact layouts and densely populated PCBs. The surface-mount form factor is ideal for automated assembly lines and large-volume manufacturing, facilitating rapid production and reliable mounting.

With an operating temperature range from -65°C to 150°C, the diode maintains stable electrical characteristics across diverse environmental conditions, including automotive electronics, industrial control systems, and consumer devices. Automotive qualification as per AEC-Q101 ensures robustness for vehicular electronics.

It features fast response, low forward voltage drop (maximum 320mV), and high junction temperature support for optimal efficiency and minimal power dissipation in switching applications.

Common use cases include switching power supplies, voltage clamping, signal rectification in portable equipment, automotive ECUs, and protection against voltage transients. Explore more Nexperia Schottky Diodes in the Semiconductor category to find the ideal solution for your design requirements.

Nexperia Schottky Diode 40V 200mA 2-Pin Surface Mount I-IGIA 1PS79SB30,115
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Frequently Asked Questions

The maximum continuous forward current for this model is rated at 200mA.

The dimensions of the I-IGIA package are 1.25mm in length, 0.85mm in width, and 0.65mm in height.

The operating temperature range for this model is from -65°C to 150°C.

It complies with the AEC-Q101 automotive standard, making it suitable for automotive applications.

This model uses a surface mount configuration, which is optimized for high-density PCB designs.

The maximum forward voltage drop for this diode is 320mV.

The peak non-repetitive forward surge current rating is 1A.

This diode is suitable for small-signal rectification, protection, and power management tasks in consumer, automotive, and industrial electronic designs.

The pin count for this model is 2.

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