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onsemi NPN Power Transistor 8A 80V TO-252 Surface Mount MJD44H11T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 10.41mm |
| Length | 6.73mm |
| Model | MJD44H11T4G |
| Width | 2.38mm |
| Mount Type | Surface |
| Series | MJD44H11 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Minimum DC Current Gain hFE | 60 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1.75W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 85MHz |
| onsemi NJVMJD44H11T4G Transistor, 8 A NPN, 80 V, 3-Pin DPAKBrand | onsemi |
Key Features
- Designed for high-power switching applications requiring NPN transistor configuration.
- Offers a maximum DC collector current of 8A, suitable for demanding power circuitry.
- TO-252 surface mount package ensures compact footprint and efficient heat dissipation.
- Provides 80V maximum collector-emitter voltage for enhanced reliability and versatility.
- Supports single transistor configuration with NPN polarity, making it ideal for automotive and industrial electronics.
- Features a maximum power dissipation of 1.75W for sustained operational stability.
- Minimum DC current gain of 60 and a transition frequency of up to 85MHz.
- Rated for automotive standard AEC-Q101 compliance.
Product Description
onsemi MJD44H11T4G is a high-performance NPN power transistor engineered for modern switching and amplification circuits. With a maximum collector current of 8A and an 80V collector-emitter voltage rating, this transistor is ideal for robust power delivery applications in automotive, industrial, and commercial electronics.
The device uses a TO-252 (DPAK) surface mount package, providing ease of placement for PCB assembly and efficient heat management. Its single NPN configuration and automotive AEC-Q101 standard rating make it suitable for use in demanding applications where reliability and longevity are critical.
Featuring a maximum power dissipation of 1.75W and a minimum DC current gain of 60, the MJD44H11T4G offers stable performance under continuous operation. The transition frequency is up to 85MHz, supporting high-speed switching and signal amplification requirements.
With three pins and a surface mount design, the transistor is compatible with automated production environments and optimizes space on densely populated circuit boards. Dimensions include a length of 6.73mm, width of 2.38mm, and height of 10.41mm, facilitating integration in compact electronic layouts.
Operational temperature ranges from -55°C to 150°C, ensuring suitability for harsh thermal environments. The device meets the AEC-Q101 automotive standard, guaranteeing compliance for automotive systems.
High collector current and voltage ratings for powerful energy transfers. TO-252 surface mount package for efficient PCB design. Reliable NPN transistor characteristics meet automotive standard requirements. Ideal for high-speed switching and amplifier stages in industrial control, automotive ECUs, and power supplies.
Durable construction and wide temperature tolerance for robust performance. Explore more Bipolar Transistors for electronic and industrial applications or browse the full range of onsemi products on EnvMart.
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Frequently Asked Questions
The maximum DC collector current for the MJD44H11T4G is 8A, making it suitable for demanding power circuitry.
This model has a maximum collector-emitter voltage rating of 80V, which enhances its reliability in various applications.
The dimensions of the TO-252 package are 6.73mm in length, 2.38mm in width, and 10.41mm in height.
The maximum power dissipation for the MJD44H11T4G is 1.75W, allowing for sustained operational stability.
The minimum DC current gain (hFE) for this transistor is 60, which supports efficient amplification.
This model features a transition frequency of up to 85MHz, making it suitable for high-speed switching applications.
The operational temperature range for the MJD44H11T4G is from -55°C to 150°C, ensuring its suitability for harsh environments.
Yes, the MJD44H11T4G is rated for AEC-Q101 compliance, making it suitable for automotive applications.
This model utilizes a single NPN transistor configuration, which is ideal for various electronic applications.
The MJD44H11T4G features a 3-pin configuration, facilitating its integration into circuit designs.
The maximum emitter-base voltage (VEBO) for this model is 5V, which is important for ensuring safe operation.
The MJD44H11T4G is designed for surface mounting, which aids in efficient PCB assembly and heat dissipation.
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