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onsemi N-Channel MOSFET 157A 80V Enhancement 5-Pin DFN Surface Mount NTMFS6H801N

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 6.1mm
Model NTMFS6H801N
Width 5.1mm
Mount Type Surface
Series NTMFS6H801N
Maximum Operating Temperature 175°C
Package Type DFN
Minimum Operating Temperature -55°C
Pin Count 5
Channel Type Type N
Maximum Continuous Drain Current Id 157A
Maximum Drain Source Voltage Vds 80V
Maximum Drain Source Resistance Rds 4.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 166W
Typical Gate Charge Qg @ Vgs 64nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.8V

Key Features

  • Features high continuous drain current of 157A for demanding power applications.
  • Supports maximum drain-source voltage of 80V for robust electrical performance.
  • Enhancement mode channel for efficient switching characteristics.
  • Low RDS(on) of 4.4mΩ, minimizing conduction losses and improving efficiency.
  • Surface mount DFN 5-pin package suited for compact PCB layouts.
  • Operates over a wide temperature range from -55°C to 175°C.
  • Maximum power dissipation rated at 166W for heavy-duty use.
  • Optimal for applications including switching power supplies, motor control, load switches, DC/DC converters, and synchronous rectifiers.

Product Description

The onsemi NTMFS6H801NT1G is a high-performance N-Channel MOSFET designed for commercial and industrial electronic applications. With a maximum continuous drain current of 157A and a drain-source voltage of 80V, this enhancement mode MOSFET is ideal for high-power switching solutions, including use in power supplies, load switches, and motor control systems.

This device features a compact DFN 5-pin surface mount package, providing a small footprint of 5x6 mm that enables efficient board space utilization in dense designs. The advanced silicon structure delivers a low RDS(on) value of 4.4mΩ, resulting in reduced conduction losses and enhanced energy efficiency for load-driving and switching circuits.

Its wide temperature operating range - from -55°C to 175°C - ensures reliable performance under harsh environmental conditions, making it suitable for use in automotive, industrial, and commercial environments where thermal stability is critical. The MOSFET offers a maximum power dissipation of 166W, supporting heavy-duty applications and sustained high-current operation.

A typical gate charge of 64nC at Vgs provides fast switching with low driver power losses. Additional features include a channel mode of enhancement, a maximum gate-source voltage of 20V, and a forward voltage of 0.8V, supporting efficient gate control and safe interface with electronic circuits.

The small and robust DFN package allows for surface mounting, making this MOSFET a practical choice for automated assembly and integration into modern PCB designs. Its application range covers switching power supplies, DC/DC converters, synchronous rectifiers, high/low side drivers, H-bridge circuits, motor control, and general-purpose load switching.

High continuous drain current enables powerful and reliable switching in industrial circuits. Low RDS(on) for minimal conduction losses and improved system efficiency. Compact DFN package supports high-density designs and surface mount technology.

Wide operating temperature range ensures durability in harsh environments. Suitable for automotive, commercial, and industrial power applications. Minimized gate charge and capacitance allow for low driver losses and faster switching.

Five-pin package simplifies layout for board designers and OEMs. Ideal for use in power switches, motor drive systems, synchronous rectifiers, and DC/DC converters. Robust electrical characteristics support demanding electronic and power management systems.

Explore more MOSFET devices and onsemi products in EnvMart's extensive semiconductor category for advanced electronics and power management needs.

onsemi N-Channel MOSFET 157A 80V Enhancement 5-Pin DFN Surface Mount NTMFS6H801N
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Frequently Asked Questions

The maximum continuous drain current for this model is 157A, making it suitable for high-power applications.

This MOSFET supports a maximum drain-source voltage of 80V, ensuring robust electrical performance in various applications.

It features a low RDS(on) value of 4.4mΩ, which helps minimize conduction losses and improve efficiency in circuits.

The device operates over a wide temperature range from -55°C to 175°C, making it suitable for harsh environmental conditions.

This model comes in a DFN 5-pin package, with dimensions of 6.1mm in length, 5.1mm in width, and a height of 1.1mm.

It is optimal for applications including switching power supplies, motor control, load switches, DC/DC converters, and synchronous rectifiers.

The maximum power dissipation for this MOSFET is rated at 166W, supporting heavy-duty use in demanding applications.

The typical gate charge is 64nC at Vgs, allowing for fast switching with low driver power losses.

This MOSFET has a maximum gate-source voltage of 20V, ensuring safe interface with electronic circuits.

The forward voltage for this model is 0.8V, which is relevant for its switching characteristics.

It features an enhancement mode channel, which provides efficient switching characteristics.

This model has a pin count of 5, suitable for compact PCB layouts.

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