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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | NTMFS6H801N |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NTMFS6H801N |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 157A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 4.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 166W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.8V |
The onsemi NTMFS6H801NT1G is a high-performance N-Channel MOSFET designed for commercial and industrial electronic applications. With a maximum continuous drain current of 157A and a drain-source voltage of 80V, this enhancement mode MOSFET is ideal for high-power switching solutions, including use in power supplies, load switches, and motor control systems.
This device features a compact DFN 5-pin surface mount package, providing a small footprint of 5x6 mm that enables efficient board space utilization in dense designs. The advanced silicon structure delivers a low RDS(on) value of 4.4mΩ, resulting in reduced conduction losses and enhanced energy efficiency for load-driving and switching circuits.
Its wide temperature operating range - from -55°C to 175°C - ensures reliable performance under harsh environmental conditions, making it suitable for use in automotive, industrial, and commercial environments where thermal stability is critical. The MOSFET offers a maximum power dissipation of 166W, supporting heavy-duty applications and sustained high-current operation.
A typical gate charge of 64nC at Vgs provides fast switching with low driver power losses. Additional features include a channel mode of enhancement, a maximum gate-source voltage of 20V, and a forward voltage of 0.8V, supporting efficient gate control and safe interface with electronic circuits.
The small and robust DFN package allows for surface mounting, making this MOSFET a practical choice for automated assembly and integration into modern PCB designs. Its application range covers switching power supplies, DC/DC converters, synchronous rectifiers, high/low side drivers, H-bridge circuits, motor control, and general-purpose load switching.
High continuous drain current enables powerful and reliable switching in industrial circuits. Low RDS(on) for minimal conduction losses and improved system efficiency. Compact DFN package supports high-density designs and surface mount technology.
Wide operating temperature range ensures durability in harsh environments. Suitable for automotive, commercial, and industrial power applications. Minimized gate charge and capacitance allow for low driver losses and faster switching.
Five-pin package simplifies layout for board designers and OEMs. Ideal for use in power switches, motor drive systems, synchronous rectifiers, and DC/DC converters. Robust electrical characteristics support demanding electronic and power management systems.
Explore more MOSFET devices and onsemi products in EnvMart's extensive semiconductor category for advanced electronics and power management needs.
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