Renesas Electronics BD679 NPN Darlington Transistor 4A 80V HFE:750 SOT-32 BD679

Renesas Electronics BD679 is an NPN Darlington transistor designed for use in a variety of electronic amplification and switching applications. Featuring a maximum continuous collector current of 4A and a collector-emitter voltage of up to 80V, this device is tailored for moderate power circuits requiring robust performance and reliable signal amplification.

The BD679 transistor offers a minimum DC current gain (hFE) of 750, allowing for high signal amplification efficiency while maintaining stable operation across a wide temperature range from -65°C to 150°C. Its collector-emitter saturation voltage of 2.5V supports fast and efficient switching, making it suitable for demanding operational environments.

Physically, this transistor is packaged in a SOT-32 case with a through-hole pin configuration, facilitating easy integration into PCBs and ensuring durable mechanical performance. The three-pin design aligns with standard transistor usage and supports straightforward circuit connections.

With a maximum emitter-base voltage of 5V and collector-base voltage of 80V, the BD679 is engineered to operate within higher voltage scenarios commonly found in industrial and power electronics. It meets robust standards for collector cut-off current (0.2mA) and is not specified as automotive grade, emphasizing its application in general-purpose and industrial electronics.

Applications include power amplifiers, switching regulators, and signal processing assemblies within manufacturing, laboratory equipment, hardware controls, and industrial automation systems.

High-performance NPN Darlington transistor for efficient amplification. Maximum continuous collector current of 4A suitable for moderate power applications. Maximum collector-emitter voltage of 80V enables use in robust electronic circuits.

DC current gain (hFE) of 750 provides outstanding signal amplification. SOT-32 package with through-hole mounting facilitates reliable integration into PCBs. Three-pin design supports standard transistor configurations. Minimum operating temperature of -65°C and maximum up to 150°C for extended thermal stability.

Collector-emitter saturation voltage of 2.5V ensures fast switching performance. Ideal for industrial, hardware, and power electronics applications. Explore more semiconductor and Darlington transistor solutions from Renesas Electronics in the EnvMart catalog for your high-power electronic design needs.

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