Infineon Thyristor Module 2200 V 16.3 kA 548 A 250 mA 1.73 V 7-Pin ETT540N22P60HPSA1

The Infineon ETT540N22P60HPSA1 Thyristor Module is a robust semiconductor device optimized for phase control and switching applications in industrial, power management, and electronics manufacturing sectors. It supports a rated average on-state current of 548 A and a repetitive peak reverse voltage of 2200 V, making it ideal for high-power circuits requiring reliable operation under demanding electrical loads.

This module features a surge current rating of 16.3 kA, which provides excellent capability to withstand transient overcurrents. Its 7-pin configuration facilitates secure and stable electrical connections, ensuring effective integration within assemblies.

The maximum gate trigger current of 250 mA and maximum gate trigger voltage of 2.2 V allow precise and consistent triggering, improving controllability in switching operations. The device maintains operational stability with a maximum holding current of 300 mA and tolerates elevated ambient temperatures up to 135°C.

With a peak on-state voltage of 1.73 V, the module delivers efficient conduction with minimal power loss. Constructed with pressure contact technology, this module provides enhanced durability and reliability, fitting for rigorous industrial environments.

Commonly utilized in power electronics, industrial automation, and energy control systems, the Infineon ETT540N22P60HPSA1 Thyristor Module supports demanding applications requiring solid-state switching and modulation capabilities.

Rated average on-state current of 548 A ensures reliable conduction. Repetitive peak reverse voltage rating of 2200 V provides robustness against voltage surges. Surge current handling capability up to 16.3 kA enhances transient performance.

Equipped with 7 pins for stable and secure connections. Maximum gate trigger current of 250 mA for precise triggering control. Maximum holding current of 300 mA ensures device stability during operation. Maximum gate trigger voltage is 2.2 V for efficient gate control.

Operates reliably up to 135°C maximum operating temperature. Peak on-state voltage of 1.73 V ensures efficient conduction with minimal loss. Manufactured using pressure contact technology for enhanced durability. Explore additional power semiconductor solutions and modules at EnvMart for comprehensive industrial electronics components.