Nexperia Bipolar NPN Transistor, 1 A DC Collector Current, 60 V Collector-Emitter Voltage, Surface Mount SOT-89 Package BSR41

Nexperia BSR41 bipolar NPN transistor is designed for electronic circuits requiring up to 1 A collector current and 60 V collector-emitter voltage. It is housed in a 3-pin SOT-89 surface mount package, making it suitable for compact and high-density PCB assemblies.

This transistor offers a maximum transition frequency of 100 MHz, enabling high-speed switching and amplification in various industrial and commercial applications including power management, signal processing, and general-purpose electronic designs.

Its operating temperature range from -65°C to 150°C and maximum power dissipation of 1.35 watts make it ideal for use in environments with wide temperature variations and moderate thermal demands. The NPN polarity and single transistor configuration simplify integration into bipolar transistor circuits.

The device features compact dimensions with a length of 4.6 mm, width of 2.6 mm, and height of 4.25 mm, fitting easily into surface mount layouts. A minimum DC current gain of 30 ensures efficient current amplification, making it well-suited for switching and amplification tasks.

Supports maximum DC collector current of 1 ampere for moderate power handling. Collector-emitter voltage rating of 60 volts ensures reliable switching. Surface mount SOT-89 package with 3 pins for compact PCB integration.

High transition frequency of up to 100 MHz suitable for high speed circuits. Wide operating temperature range from -65°C to 150°C for varied environments. Maximum power dissipation of 1.35 watts to handle thermal loads effectively.

NPN transistor polarity with single transistor configuration. Compact dimensions: length 4.6 mm, width 2.6 mm, height 4.25 mm. Minimum DC current gain (hFE) of 30 for efficient amplification. Reliable product made in Hong Kong by Nexperia.

This transistor is ideal for industrial, electronic manufacturing, telecommunications, and HVAC system control applications where reliable bipolar transistors are essential. Its compact package and robust electrical characteristics support high-density circuit boards and fast switching requirements.

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