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STMicroelectronics Transistor 3 A NPN, 60 V, 3-Pin SOT-89 2STF1360
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | 2STF1360 |
| Width | 10.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 80 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Power Dissipation Pd | 1.4W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 130MHz |
Key Features
- This transistor supports a maximum DC collector current of 3 amperes.
- It has a maximum collector-emitter voltage rating of 60 volts.
- The device features a maximum power dissipation of 1.4 watts.
- It is designed for surface mount applications in the SOT-89 package.
- The transistor offers a minimum DC current gain (hFE) of 80.
- Operating temperature ranges from -65°C to 150°C for wide industrial use.
- Maximum transition frequency of 130 MHz suits high-frequency applications.
- This transistor has a collector-base voltage maximum of 80 volts and emitter-base voltage maximum of 6 volts.
Product Description
STMicroelectronics 2STF1360 is a robust NPN bipolar transistor designed to handle a maximum DC collector current of 3 A and a collector-emitter voltage of 60 V, making it suitable for various electronics and power control applications. Packaged in a compact 3-pin SOT-89 surface mount format, it ensures space-saving integration on printed circuit boards.
It supports continuous power dissipation of up to 1.4 W and can operate reliably across a broad temperature range from -65°C to 150°C, making it ideal for demanding industrial and manufacturing environments. The transistor's minimum gain (hFE) of 80 provides efficient amplification performance.
The device’s maximum transition frequency of 130 MHz allows usage in circuits requiring high-frequency signal handling, while the maximum collector-base voltage of 80 V and emitter-base voltage of 6 V ensure safe operation under various electrical conditions.
Physical dimensions of 6.6 mm length, 10.1 mm width, and 2.4 mm height facilitate compact design without compromising power handling capabilities. This transistor supports a maximum DC collector current of 3 amperes. Maximum collector-emitter voltage is rated at 60 volts.
Rated power dissipation is 1.4 watts for continuous operation. Minimum DC current gain (hFE) is 80 for reliable amplification. Operates safely from -65°C up to 150°C ambient temperatures. Maximum transition frequency of 130 MHz suitable for high-frequency use.
Compact surface mount SOT-89 package with three pins. Not compliant with automotive standards, suitable for general electronics. Package dimensions: length 6.6 mm, width 10.1 mm, height 2.4 mm.
This STMicroelectronics transistor is well suited for industrial, electronics manufacturing, power switching, and signal amplification applications. Its specifications make it ideal for use in power management circuits, consumer electronics, instrumentation, and control systems.
Explore more STMicroelectronics transistors and electronic components in the EnvMart catalog for reliable industrial and laboratory solutions.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum DC collector current for this transistor is 3 amperes.
The collector-emitter voltage rating is 60 volts.
This model is packaged in a SOT-89 surface mount format.
The maximum power dissipation for this transistor is 1.4 watts.
It operates within a temperature range of -65°C to 150°C.
The minimum DC current gain (hFE) is 80.
The maximum transition frequency is 130 MHz, suitable for high-frequency applications.
The physical dimensions are 6.6 mm in length, 10.1 mm in width, and 2.4 mm in height.
The maximum collector-base voltage rating is 80 volts.
It is an NPN bipolar transistor.
The maximum emitter-base voltage is 6 volts.
This transistor is suitable for power management circuits, consumer electronics, instrumentation, and control systems.
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