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Nexperia Low Saturation Voltage PNP Transistor, -1 A Collector Current, -150 V Collector Emitter Voltage PBHV9115Z,115

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Nexperia Low Saturation Voltage PNP Transistor, -1 A Collector Current, -150 V Collector Emitter Voltage PBHV9115Z,115

Name: Nexperia Low Saturation Voltage PNP Transistor, -1 A Collector Current, -150 V Collector Emitter Voltage PBHV9115Z,115
Brand: Nexperia
SKU: 376526
Price: 0.5 USD
Availability: InStock

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Category Transistor Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.8mm
Length	6.7mm
Model	PBHV9115Z,115
Width	7.3mm
Mount Type	Surface
Series	PBHV9115Z
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	4
Maximum Collector Emitter Voltage Vceo	-150V
Minimum DC Current Gain hFE	100
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-6V
Maximum Collector Base Voltage VCBO	-200V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	1.4W
Maximum DC Collector Current Idc	-1A
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
STMicroelectronics STN9360 Transistor, -500 mA PNP, -600 V, 3-Pin SOT-223Brand	STMicroelectronics

Key Features

This transistor features low collector-emitter saturation voltage for efficient switching.
It has a maximum power dissipation of 1.4W ensuring reliable thermal performance.
The device supports an operating temperature from -55°C to 150°C.
The transistor configuration is single PNP type with high current gain (hFE) of minimum 100.
It complies with RoHS standards and an automotive AEC-Q101 qualification.
Pin count is 4 and package type is surface-mount SOT-223.
The device is suitable for switching and digital applications requiring low power loss.

Product Description

Nexperia PBHV9115Z,115 Low Saturation Voltage PNP Transistor is a high-efficiency bipolar junction transistor designed for use in electronic circuits requiring low saturation losses and reliable switching performance. It features a maximum collector current of -1 A and a collector emitter voltage rating of -150 V enclosed in a compact 4-pin SOT-223 package optimized for surface mounting.

This transistor is built with emphasis on reduced losses to minimize heat generation during operation, making it ideal for switching and digital control applications in industrial, automotive, and consumer electronics environments. The device maintains stable operation over a wide temperature range from -55°C to 150°C, meeting automotive grade AEC-Q101 standards for reliability.

With a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 1.4 W, this PNP transistor ensures efficient signal amplification and switching capability. The transistor also features a maximum collector base voltage of -200 V and maximum emitter base voltage of -6 V.

This transistor features low collector-emitter saturation voltage for efficient switching. It has a maximum power dissipation of 1.4W ensuring reliable thermal performance. The device supports an operating temperature from -55°C to 150°C.

The transistor configuration is single PNP type with high current gain (hFE) of minimum 100. It complies with RoHS standards and an automotive AEC-Q101 qualification. Pin count is 4 and package type is surface-mount SOT-223.

Suitable for use in industrial, automotive, and electronic switching applications.

Country of origin is China. This transistor is part of the PBHV9115Z series by Nexperia and is RoHS compliant, ensuring environmental standards are met. Typical applications include electronic power management, automotive control systems, and digital switching circuits.

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